FSS264 Sanyo Semiconductor Corporation, FSS264 Datasheet

FSS264

Manufacturer Part Number

FSS264

Description

N-channel Silicon Mosfet

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.FSS264.pdf (4 pages)

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Ordering number : ENA0267

FSS264

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : S264

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (PW 10s)

Drain Current (PW 10 s)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

•

Low ON-resistance.

4V drive.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

V (BR)DSS

R DS (on)1

R DS (on)2

V GS (off)

Symbol

V DSS

V GSS

t d (on)

t d (off)

I GSS

I DSS

Coss

Crss

Ciss

Tstg

I DP

Tch

P D

yfs

I D

t r

t f

Duty cycle 1%

Mounted on a ceramic board (1200mm

I D =1mA, V GS =0V

V DS =100V, V GS =0V

V GS = 16V, V DS =0V

V DS =10V, I D =1mA

V DS =10V, I D =2A

I D =2A, V GS =10V

I D =2A, V GS =4V

V DS =20V, f=1MHz

See specified Test Circuit

FSS264

Conditions

0.8mm) PW 10s

D2005PA MS IM TB-00001963

min

100

1.2

3.0

Ratings

typ

1560

Ratings

130

155

5.5

Continued on next page.

--55 to +150

max

100

150

2.4

112

2.6

No. A0267-1/4

Unit

Related parts for FSS264

FSS264 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN FSS264 Symbol Conditions V DSS V GSS ...

Page 2

... IT10022 Ratings min typ max 34 5 =50V V IN 10V PW= P.G 50 FSS264 =10V 0.5 1.0 1.5 2.0 2.5 Gate-to-Source Voltage (on --60 --40 -- ...

Page 3

... V DS =50V = Total Gate Charge 3.0 2.5 2.0 1.5 1.0 0 100 Ambient Temperature FSS264 =10V 0.001 IT10024 =50V 3 ...

Page 4

... Note on usage : Since the FSS264 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...

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