FSS262 Sanyo Semiconductor Corporation, FSS262 Datasheet

FSS262

Manufacturer Part Number

FSS262

Description

N-channel Silicon Mosfet

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.FSS262.pdf (4 pages)

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Part Number

Manufacturer

Quantity

Price

Company:

H&T Electronics

Part Number:

FSS262-TL

Quantity:

432

Current page: 1 of 4
Download datasheet (32Kb)

Ordering number : ENN7211

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : S262

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

•

Low ON-resistance.

4V drive.

Ultrahigh speed switching.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V (BR)DSS

V GS (off)

Symbol

V GSS

V DSS

I GSS

I DSS

Tstg

I DP

Tch

P D

yfs

I D

I D =1mA, V GS =0

V DS =30V, V GS =0

V GS = 16V, V DS =0

V DS =10V, I D =1mA

V DS =10V, I D =10A

PW 10 s, duty cycle 1%

Mounted on a ceramic board (1200mm

FSS262

DC / DC Converter Applications

Conditions

Package Dimensions

unit : mm

2116

Conditions

0.595

1.27

5.0

0.43

0.8mm)

[FSS262]

min

N-Channel Silicon MOSFET

1.0

9.5

42503 TS IM TA-100024

Ratings

typ

13.5

Ratings

0.2

Continued on next page.

--55 to +150

FSS262

max

1 : Source

2 : Source

3 : Source

4 : Gate

5 : Drain

6 : Drain

7 : Drain

8 : Drain

SANYO : SOP8

150

1.8

2.4

No.7211-1/4

Unit

Related parts for FSS262

FSS262 Summary of contents

Page 1

... Conditions V (BR)DSS I D =1mA DSS V DS =30V GSS 16V (off =10V =1mA yfs V DS =10V =10A N-Channel Silicon MOSFET FSS262 [FSS262 Source 2 : Source 3 : Source 4 0 Gate 5 Drain 6 : Drain 7 : Drain 8 : Drain ...

Page 2

... See specified Test Circuit =10V =10V =10A Qgs V DS =10V =10V =10A Qgd V DS =10V =10V =10A =10A =15V I D =10A R L =1.5 V OUT D FSS262 =3.0V 0.6 0.7 0.8 0.9 1.0 IT04086 40 Ta= ...

Page 3

... Drain Current 2.0 1.8 1.5 1.0 0 100 Ambient Temperature FSS262 =10V 0.001 0.2 10 IT04090 =10V f=1MHz ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2003. Specifications and information herein are subject to change without notice. FSS262 PS No.7211-4/4 ...

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