FSS234 Sanyo Semiconductor Corporation, FSS234 Datasheet

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FSS234

Manufacturer Part Number
FSS234
Description
N-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FSS234-TL
Manufacturer:
N/A
Quantity:
20 000
Part Number:
FSS234-TL-E
Manufacturer:
SANYO/三洋
Quantity:
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Part Number:
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Ordering number : ENN6865
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : S234
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Low ON-resistance.
4.0V drive.
Ultrahigh-speed switching.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
V GS (off)
Symbol
Symbol
V GSS
V DSS
I GSS
I DSS
Tstg
I DP
Tch
P D
yfs
I D
I D =1mA, V GS =0
V DS =30V, V GS =0
V GS = 16V, V DS =0
V DS =10V, I D =1mA
V DS =10V, I D =12A
PW 10 s, duty cycle 1%
Mounted on a ceramic board (1200mm
FSS234
DC / DC Converter Applications
Conditions
Package Dimensions
unit : mm
2116
Conditions
0.595
8
1
1.27
5.0
0.43
2
0.8mm)
4
5
[FSS234]
min
N-Channel Silicon MOSFET
12.6
1.0
30
22201 TS IM TA-2067
Ratings
typ
Ratings
18
0.2
Continued on next page.
--55 to +150
FSS234
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
max
150
2.0
2.4
30
20
12
52
10
1
No.6865-1/4
Unit
Unit
W
V
V
A
A
V
V
S
C
C
A
A

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FSS234 Summary of contents

Page 1

... Conditions V (BR)DSS I D =1mA DSS V DS =30V GSS 16V (off =10V =1mA yfs V DS =10V =12A N-Channel Silicon MOSFET FSS234 [FSS234 Source 2 : Source 3 : Source Gate 0.2 5 Drain 6 : Drain 7 : Drain 8 : Drain ...

Page 2

... See specified Test Circuit =10V =10V =12A Qgs V DS =10V =10V =12A Qgd V DS =10V =10V =12A =12A =15V I D =12A R L =1.25 V OUT D FSS234 0.6 0.7 0.8 0.9 1.0 IT02766 40 Ta= ...

Page 3

... Total Gate Charge 2.5 2.0 1.5 1.0 0 100 Amibient Tamperature FSS234 100 V DS =10V 0.001 0.2 IT02770 10000 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2001. Specifications and information herein are subject to change without notice. FSS234 PS No.6865-4/4 ...

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