HN2E01F TOSHIBA Semiconductor CORPORATION, HN2E01F Datasheet - Page 2

• Manufacturer Part Number: HN2E01F
• Description: Toshiba Multi Chip Discrete Device
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q1 (Diode)
Q2 (Transistor)
Marking
Fig. 1 : Reverse Recovery Time (t
* h
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
FE
Rank A : 600~1800, B : 1200~3600
12A
Characteristic
Characteristic
Electrical Characteristics
Type Name
Electrical Characteristics
h
FE
Rank
V
Symbol
Symbol
V
V
V
CE(sat)
I
I
I
I
h
R (1)
R (2)
CBO
EBO
C
F (1)
F (2)
F (3)
C
t
FE
f
rr
T
ob
T
*
rr
) Test Circuit
(Ta = 25°C)
Circuit
Circuit
Test
Test
―
―
―
―
―
―
―
―
―
―
―
―
―
(Ta = 25°C)
Equivalent Circuit
2
V
V
V
I
V
V
I
I
I
V
V
V
I
F
F
F
F
C
R
R
R
CB
EB
CE
CE
CB
= 1mA
= 10mA
= 100mA
= 10mA (fig.1)
=100mA, I
6
1
= 30V
= 80V
= 0, f = 1MHz
= 5V, I
= 50V, I
= 6V, I
= 10V, I
= 10V, I
Q1
Test Condition
Test Condition
5
2
C
C
E
C
E
B
= 0
= 2mA
= 0
=10mA
= 0,f=1MHz
=10mA
Q2
4
3
(Top View)
Min
600
Min
―
―
―
―
―
―
―
―
―
―
―
―
Typ.
0.12
Typ.
0.62
0.75
0.98
250
3.5
0.5
1.6
―
―
―
―
―
HN2E01F
2004-06-28
3600
Max
0.25
Max
100
100
1.2
0.1
0.5
―
―
―
―
―
―
MHz
Unit
Unit
nA
nA
µA
pF
pF
ns
V
V