HN2E01F TOSHIBA Semiconductor CORPORATION, HN2E01F Datasheet
HN2E01F
Manufacturer Part Number
HN2E01F
Description
Toshiba Multi Chip Discrete Device
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.HN2E01F.pdf
(7 pages)
Super High Speed Switching Application
Audio Frequency Amplifier Application
General Switching Application
Q1
Q2
Q1 (Diode) Maximum Ratings
Q2 (Transistor) Maximum Ratings (
Maximum Ratings
* Total rating: 200mW per element should not be exceeded.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Low Forward Voltage Drop
Fast Reverse Recovery Time
Low Total Capacitance
High DC Current Gain
High Voltage
High Collector Current
Q1 (Diode)
Q2 (Transistor)
Characteristic
Characteristic
Characteristic
(Ta = 25°C) (Q1, Q2 Common)
TOSHIBA MULTI CHIP DISCRETE DEVICE
:
:
:
:
:
:
:
:
Symbol
Symbol
Symbol
t
V
C
h
V
I
1SS352 Equivalent
2SC4666 Equivalent
V
V
V
(Ta = 25°C)
rr
C
V
I
FE
P
T
FSM
F(3
CEO
I
T
V
CBO
CEO
EBO
=1.6ns(typ.)
FM
I
I
I
=150mA(max.)
T
RM
C
stg
O
B
C
HN2E01F
=0.5pF(typ.)
R
j
=600~3600
*
)=0.98V(typ.)
=50V
Ta = 25°C
−55~125
Rating
Rating
Rating
150
300
100
300
125
50
50
30
85
80
5
1
1
)
Unit
Unit
Unit
mW
mA
mA
mA
mA
°C
°C
V
V
V
V
V
A
JEDEC
JEITA
TOSHIBA
Weight: 0.015g (typ.)
1.Anode
2.Base
3.Collector
4.Emitter
5.NC
6.Cathode
2-3N1D
―
―
HN2E01F
2004-06-28
Unit: mm
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HN2E01F Summary of contents
Page 1
... FSM ) Ta = 25°C Symbol Rating Unit CBO CEO EBO I 150 Symbol Rating Unit P 300 °C T 125 j −55~125 °C T stg 1 HN2E01F Unit: mm 1.Anode 2.Base 3.Collector 4.Emitter 5.NC 6.Cathode ― ― 2-3N1D 2004-06-28 ...
Page 2
... CE(sat ― 10V, I =10mA ― 10V 0,f=1MHz Equivalent Circuit Test Circuit rr 2 HN2E01F Min Typ. Max Unit ― 0.62 ― V ― 0.75 ― ― 0.98 1.2 ― ― 0.1 µA ― ― 0.5 ― 0.5 ― pF ― 1.6 ― ns Min Typ. ...
Page 3
... Q1 3 HN2E01F 2004-06-28 ...
Page 4
... Q2 4 HN2E01F 2004-06-28 ...
Page 5
... Q2 5 HN2E01F 2004-06-28 ...
Page 6
... Q1, Q2 Common * P – 500 400 300 200 100 100 AMBIENT TEMPERATURE Ta (°C) *Total Rating. 125 150 175 6 HN2E01F 2004-06-28 ...
Page 7
... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations . 7 HN2E01F 030619EAA 2004-06-28 ...