HN29V102414 Renesas Electronics Corporation., HN29V102414 Datasheet - Page 45

• Manufacturer Part Number: HN29V102414
• Description: 1g And Type Flash Memory More Than 32,113-sector 542,581,248-bit X 2
• Manufacturer: Renesas Electronics Corporation.

For Errors in program or erase operations
The device may fail during a program or erase operation. Failure mode can be confirmed by read out the
status register after complete the erase and program operations. There are two failure modes specified by
each codes:
1: Status register error flag: I/O6 = V
Replace sector under the “Spare Sectors Replacement Flow at Status Register I/O6 Read”. Replacement must
be applied to one sector(2k bytes) which contains failure bits.
2: Status register error flag: I/O6 = V
Escape the program data temporary under the “Replacement Flow at Status Register I/O6 Read”. If failure
data can be corrected by ECC, do not replace to spare sector. If failure data can not be corrected by ECC,
replace to spare sector. Replacement must be applied to one sector(2k bytes) which contains failure bits.
Note: 1. Refer to 'Spare sector replacement flow after program error' to escape the deta.
Program start
Program end
Check status
Yes
START
END
Spare Sectors Replacement Flow at Status Register I/O6 Read
Set an usable sector
Check RDY/Busy
Sector Replacement
No
Check status
Program end
Check I/O6
Yes
V
OL
OL
OH
V
No
OH
Check status: Status register read
Check I/O6: I/O6 output monitor
Check ECC: Correct by ECC?
Escape program deta*
Read error sector
Check ECC
Yes
1
No
HN29V102414 Series
Sector Replacement
Program end
Check status
Yes
No
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