HN29V102414 Renesas Electronics Corporation., HN29V102414 Datasheet

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HN29V102414

Manufacturer Part Number
HN29V102414
Description
1g And Type Flash Memory More Than 32,113-sector 542,581,248-bit X 2
Manufacturer
Renesas Electronics Corporation.
Datasheet

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To all our customers
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003

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HN29V102414 Summary of contents

Page 1

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April ...

Page 2

Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may ...

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... V power supply. The functions are controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase is as small as (2048 + 64) bytes. Initial available sectors of HN29V102414 are more than 64,226 (98% of all sector address) and less than 65,536 sectors. ...

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... HN29V102414 Series Erase mode Single sector erase ((2048 + 64) byte unit) Fast serial read access time: First access time (max) Serial access time (max) Low power dissipation (typ) (Read) (1-chip operation) CC1 (typ) (Read) (2-chip operation) CC1 (max) (Read) (1-chip operation) ...

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... I/O6 I/O7* 19 CDE WE CE Note: 1. This pin can be used as the V 2. Upper chip. 3. Lower chip. HN29V102414 Series 48-pin TSOP (Top view) pin RES ...

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... HN29V102414 Series Pin Description Pin name I/ CDE RDY/Busy RES SC NC Note: 1. All V and V pins should be connected to a common power supply and a ground, respectively Function Input/output Chip enable Output enable Write enable Command data enable Power supply ...

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... Data register (2048 + 64) • • Data Input • • • Y-gating input data • • • buffer control Y-decoder • • Y-address • counter • Read/Program/Erase control HN29V102414 Series Data output buffer • • • Data output buffer • • • 5 ...

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... HN29V102414 Series Memory Map and Address Sector address 7FFFH 7FFEH 7FFDH 0002H 0001H 0000H 000H Address Cycles Sector address SA (1): First cycle SA (2): Second cycle Column address CA (1): First cycle CA (2): Second cycle Notes: 1. Some failed sectors may exist in the device. The failed sectors can be recognized by reading the sector valid data written in a part of the column address 800 to 83F (The specific address is TBD ...

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... IH IH IHR IHR IHR IL and maintain the HN29V102414 Series (V IHR I/O0 to I/O7 High-Z OH High-Z OH High-Z OH Status register outputs OH Din OH (conventional read operation level while the RDY/Busy pin referred to DC characteristics ...

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... HN29V102414 Series 1, 2 Command Definition* Command Read Serial read (1) (Without CA) 3 (With CA) Serial read (2) Read identifier codes Data recovery read Auto erase Single sector Auto program Program (1) (Without 7 CA* ) (With CA* 10 Program (2)* Program (3) (Control bytes)* Program (4) (WithoutCA* (With CA* Reset Clear status register ...

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... SA (2 Write SA (2 Write SA (2 2h* Write SA (2 Write SA (2)* HN29V102414 Series Fourth bus cycle Operation Data in mode 5 Write CA (1)* 11 Write B0H* *11, 12 Write 40H Write CA (1) *11, 12 Write 40H *11, 12 Write 40H *11, 12 Write 40H ...

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... HN29V102414 Series Command Read Serial read (1) (Without CA) 3 (With CA) Serial read (2) Read identifier codes Data recovery read Auto erase Single sector Auto program Program (1) (Without 7 CA* ) (With CA* 10 Program (2)* Program (3) (Control bytes)* Program (4) (WithoutCA* (With CA* Reset Clear status register Data recovery write Notes: 1 ...

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... When the column is programmed, the data of the column must be [FF]. After the programming starts, the program completion can be checked through the RDY/Busy signal and status data polling. Programmed bits in the sector turn from "1" to "0" when they are programmed. HN29V102414 Series . IH ...

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... HN29V102414 Series Program (4): Program data PD0 to PD2111 is programmed into the sector of address SA automatically by internal control circuits. When CA is input, program data PD ( programmed from CA into the sector of address SA automatically by internal control circuits. By using program (4), data can be rewritten for each sector before the following erase. So the column data before programming operation are either " ...

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... Program (4) mode, rewritten sector of address SA’ needs no sector erase before rewrite. After the data recovery write mode starts, the program completion can be checked through the RDY/Busy signal and the status data polling. HN29V102414 Series . The read data are invalid when addresses IH ...

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... HN29V102414 Series Command/Address/Data Input Sequence Serial Read (1) (With CA before SC) Command 00H SA (1) SA (2) /Address CDE WE Low SC Serial Read (1) (With CA after SC) Command 00H SA (1) SA (2) /Address CDE WE Low SC Data output Serial Read (1) (Without CA), (2) Command/Address 00H/F0H CDE WE Low SC Single Sector Erase Command/Address ...

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... CDE WE SC Low CA (2) CA (1)' CA (2)' Data input CA (1) CA (2) CA (1)' Data input SA (1) SA (2) Data input SA (1) SA (2) Data input HN29V102414 Series 40H Data input Program start CA (2)' 40H Data input Program start 40H Program start 40H Program start 15 ...

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... HN29V102414 Series Program (3) Command/Address 0FH CDE WE SC Low ID Read Mode Command/Address CDE WE SC Low Data Recovery Read Mode Command/Address Data Recovery Write Mode Command/Address CDE (1) SA (2) Data input 90H Manufacture Device code code output output 01H CDE WE SC Low ...

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... SC, CDE Program finish 50H 1 01H* Data recovery read setup CE Error 1 12H* Output Data recovery standby disable write setup FFH OE HN29V102414 Series OE CA(1)' SC CA(2)' Read (1) / (2) BUSY OE Status register Erase read start OE 40H Status register Program read start OE 40H Status register ...

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... HN29V102414 Series Absolute Maximum Ratings Parameter V voltage CC V voltage SS All input and output voltages Operating temperature range Storage temperature range Storage temperature under bias Notes: 1. Relative Vin, Vout = –2.0 V for pulse width 3. Device storage temperature range before programming. Capacitance (Ta = 25˚ MHz) ...

Page 21

... CC 0.2 V — — 0 2.4 — — the read operation the erase/data programming operation over the specified maximum value, the IH HN29V102414 Series Unit Test conditions A Vin = Vout = ...

Page 22

... HN29V102414 Series AC Characteristics ( +70˚C) CC Test Conditions Input pulse levels: 0.4 V/2.4 V Input pulse levels for RES: 0.2 V/V Input rise and fall time Output load: 1 TTL gate + 100 pF (Including scope and jig.) Reference levels for measuring timing: 0 – 0 ...

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... — — — — — — — — ns — — 0.3 ms 200 — — — — — — ns HN29V102414 Series Notes , ...

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... HN29V102414 Series Parameter Symbol SC setup for hold time for OE t COH SA ( (2) delay time t SCD RDY/Busy setup for Time to device busy t DB Busy time on read mode t RBSY Notes time after which the I/O pins become open. ...

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... Data setup time for SC t SDS Data hold time for SC t SDH SC setup for setup for CE t SCS SC hold time for WE t SCHW HN29V102414 Series Min Typ Max Unit Test conditions 120 — — — — — ...

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... HN29V102414 Series Parameter Symbol CE to output delay output delay high to output float t DF RES to CE setup time t RP CDE setup time for WE t CDS CDE hold time for WE t CDH CDE setup time for SC t CDSS CDE hold time for SC ...

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... Undefined CEH CESR RP CES BSY Ready High-Z level referred to DC characteristics at the rising and falling edges of V level referred to DC characteristics while I/O7 outputs the V level. OL HN29V102414 Series t t CEH CESR t CWRH t t VRH DFP level in the OL 25 ...

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... HN29V102414 Series Serial Read (1) (2) Timing Waveform CE t CES CWC CWC WPH WPH OEWS WE t CDS CDS CDE t CDH SCS I/O0 to I/O7 00H SA(1) SA(2) /F0H RES RDY /Busy Notes: 1. The status returns to the standby at the rising edge of CE. ...

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... CEH CWC OEPS t WPH CDS t CDH t t CDH SCHW IO7 = V SA(2) B0H HN29V102414 Series t 1 COH * t CPH * t CEH t t CDH SOH SCC * t CDS SAC SPL SAC SAC ...

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... HN29V102414 Series Program (1) and Status Data Polling Timing Waveform CE t CES OEWS CWC CWC t t WPH WPH CDS WP CDS WP WP CDE t CDH SCS I/O0 to I/O7 10H SA (1) SA (2) RES t High-Z RP RDY /Busy Notes: 1 ...

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... CDSH t CDH * SPL t SPL SDH SDH SDS 1 PD1 CA(1) CA(2) PD(m) PD(m+1) PD(m+j)* PD(k 2048 + 64) HN29V102414 Series t t CEH OEPS OE t RDY CDS WP ASP CDH SCC SPL SCHW ...

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... HN29V102414 Series Program (2) and Status Data Polling Timing Waveform CE t CES OEWS CWC CWC t t WPH WPH CDS WP CDS WP WP CDE t CDH SCS I/O0 to I/O7 1FH SA (1) SA (2) RES t High-Z RP RDY /Busy Notes: 1 ...

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... CEH t OEPS t t CDSS SCC CDH CDH t t SCHW SPL SDH SDS PD2048 PD2049 PD2111 40H HN29V102414 Series RDY OE t ASP CDS I/ I/ High ...

Page 34

... HN29V102414 Series Program (4) and Status Data Polling Timing Waveform CE t CES OEWS CWC CWC t t WPH WPH CDS CDS WP WP CDE t CDH SCS I/O0 to I/O7 11H SA (1) SA (2) RES RDY /Busy Notes: 1 ...

Page 35

... CDSH CDH * SPL t SPL SDH SDH SDS 1 PD1 CA(1) CA(2) PD(m) PD(m+1) PD(m+j)* PD(k High 2048 + 64) HN29V102414 Series t t CEH OEPS OE t RDY CDS WP ASP CDH SCC SPL SCHW ...

Page 36

... HN29V102414 Series ID and Status Register Read Timing Waveform CE t CES OEWS OEPS CDH CDS WP CDE t SCHW SCS DS OE I/O0 to I/O7 Manufacturer 90H code RES t RP RDY /Busy Note: 1. The status returns to the standby at the rising edge of CE. ...

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... After any commands are written, the status can turns to the standby after the command FFH is input and CE turns to the V level CPH t COH SOH SCC SCC SPL SAC SAC SAC SAC D0out D1out D2111out High High-Z HN29V102414 Series CEH CDH t CDS FFH * 35 ...

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... HN29V102414 Series Data Recovery Write Timing Waveform CE t CES CWC CWC WPH WPH OEWS WE t CDS CDS CDE t CDH SCS DS AS I/O0 to I/O7 12H SA(1) High RES High-Z RDY /Busy Notes: 1. Any commands,including reset command FFH, cannot be input while RDY/Busy ...

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... DH I/O0 to I/O7 50H RES High High-Z RDY /Busy Note 1. The status returns to the standby at the rising edge of CE. t CEH t WPH t CDS t CDH Next Command HN29V102414 Series CPH t CES t OEWS t CDS t t CDH WP t SCS tDS tDH Next Command 37 ...

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... HN29V102414 Series Function Description Status Register: The HN29V102414 outputs the operation status data as follows: I/O7 pin outputs a V indicate that the memory is in either erase or program operation. The level of I/O7 pin turns the operation finishes. I/O5 and I/O4 pins output V complete in a finite time, respectively. If these pins output V out ...

Page 41

... Requirement for System Specifications 5 Program/Erase Endurance: 10 cycles Item Usable sectors (initially) Spare sectors (1-chip operation) (2-chip operation) ECC (Error Correction Code) Min Typ 64,226 — 579 — 1158 — 3 — HN29V102414 Series Max Unit 65,536 sector — sector — sector — bit/sector 39 ...

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... HN29V102414 Series Unusable Sector Initially, the HN29V102414 includes unusable sectors. The unusable sectors must be distinguished from the usable sectors by the system as follows. 1. Check the partial invalid sectors in the devices on the system. The usable sectors were programmed the following data. Refer to the flowchart “Indication of unusable sectors”. ...

Page 43

... Data recovery write mode (see the “Mode Description” and under figure “Spare Sector Replacement Flow after Program Error”). To avoid consecutive sector failures, choose addresses of spare sectors as far as possible from the failed sectors. In this case, 10 guaranteed. HN29V102414 Series 5 cycles of program/erase endurance is 41 ...

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... HN29V102414 Series START Program start Program end Check status Yes END Spare Sector Replacement Flow after Program Error 42 Set an usable sector Check RDY/Busy No Clear status register Load data from Data recovery read external buffer Set another Program start usable sector Check RDY/Busy ...

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... Note: 1. Refer to 'Spare sector replacement flow after program error' to escape the deta. Spare Sectors Replacement Flow at Status Register I/O6 Read OL OH Check status: Status register read Check I/O6: I/O6 output monitor Check ECC: Correct by ECC Escape program deta* Read error sector No Check ECC Yes HN29V102414 Series No Sector Replacement Program end No Check status Yes 43 ...

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... HN29V102414 Series Memory Structure Bit: Minimum unit of data. Byte: Input/output data unit in programming and reading. (1 byte = 8 bits) Sector: Page unit in erase, programming and reading. (1 sector = 2,112 bytes = 16,896 bits) Device: 1 device = 32,768 sectors. 44 bit sector byte (8 bits) 2,112 bytes (16,896 bits) ...

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... Package Dimensions HN29V102414T Series (TFP-48DA) 12.00 12.40 Max 0.50 *0.22 0.08 0.08 M 0.20 0.06 0.45 Max 0.08 *Dimension including the plating thickness Base material dimension HN29V102414 Series 0.80 20.00 0.20 0 – 8 0.50 0.10 Hitachi Code TFP-48DA JEDEC Conforms EIAJ Conforms Mass (reference value) 0.52 g Unit ...

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... HN29V102414 Series Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document ...

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