VI10150C-E3-4W Vishay, VI10150C-E3-4W Datasheet - Page 3

• Manufacturer Part Number: VI10150C-E3-4W
• Description: High-voltage Trench Mos Barrier Schottky Rectifier
• Manufacturer: Vishay

Document Number: 89068
Revision: 19-May-08
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
0.00001
10 000
0.0001
0.001
1000
0.01
100
100
0.1
0.1
10
10
Figure 4. Typical Reverse Characteristics Per Diode
10
1
1
Figure 5. Typical Junction Capacitance Per Diode
0.1
10
0
Percent of Rated Peak Reverse Voltage (%)
20
0.2
T
A
Instantaneous Forward Voltage (V)
= 125 °C
30
0.4
T
T
A
A
= 150 °C
= 125 °C
Reverse Voltage (V)
40
T
1
A
0.6
T
T
= 100 °C
A
A
T
= 150 °C
= 25 °C
50
A
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= 25 °C
0.8
For technical questions within your region, please contact one of the following:
T
60
A
= 100 °C
1.0
70
10
T
f = 1.0 MHz
V
J
sig
1.2
= 25 °C
80
= 50 mVp-p
V10150C, VF10150C, VB10150C & VI10150C
1.4
90
100
100
1.6
Figure 6. Typical Transient Thermal Impedance Per Diode
Figure 7. Typical Transient Thermal Impedance Per Diode
10
10
1
1
0.01
0.01
Vishay General Semiconductor
0.1
0.1
t - Pulse Duration (s)
t - Pulse Duration (s)
1
1
Junction to Case
Junction to Case
V(B,I)10150C
10
10
VF10150C
www.vishay.com
100
100
3