VI10150C-E3-4W Vishay, VI10150C-E3-4W Datasheet - Page 2

• Manufacturer Part Number: VI10150C-E3-4W
• Description: High-voltage Trench Mos Barrier Schottky Rectifier
• Manufacturer: Vishay

V10150C, VF10150C, VB10150C & VI10150C
Vishay General Semiconductor
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
RATINGS AND CHARACTERISTICS CURVES
(T
www.vishay.com
2
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Breakdown voltage
Instantaneous forward voltage per diode
Reverse current per diode
THERMAL CHARACTERISTICS (T
PARAMETER
Typical thermal resistance per diode
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
TO-262AA
A
= 25 °C unless otherwise noted)
12
Figure 1. Maximum Forward Current Derating Curve
10
8
6
4
2
0
0
Resistive or Inductive Load
Mounted on Specific Heatsink
25
50
Case Temperature (°C)
V10150C-E3/4W
VF10150C-E3/4W
VB10150C-E3/4W
VB10150C-E3/8W
VI10150C-E3/4W
(2)
VF10150C
PREFERRED P/N
75
[e-mail], [e-mail], [e-mail]
For technical questions within your region, please contact one of the following:
100
125
(1)
V(B,I)10150C
I
I
I
I
I
V
V
SYMBOL
150
R
F
F
F
F
R
R
= 3 A
= 5 A
= 3 A
= 5 A
= 1.0 mA
R
= 100 V
= 150 V
TEST CONDITIONS
A
θJC
UNIT WEIGHT (g)
= 25 °C unless otherwise noted)
175
A
= 25 °C unless otherwise noted)
1.74
1.38
1.45
1.87
1.39
T
T
T
T
T
T
T
V10150C
A
A
A
A
A
A
A
= 125 °C
= 125 °C
= 125 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
4.0
PACKAGE CODE
SYMBOL
VF10150C
Figure 2. Forward Power Loss Characteristics Per Diode
V
V
I
5
4
3
2
1
0
BR
R
4W
4W
4W
8W
4W
6.5
F
0
D = 0.1
150 (minimum)
1
Average Forward Current (A)
VB10150C
TYP.
D = 0.2
0.82
0.99
0.63
0.69
0.5
0.5
1.0
BASE QUANTITY
-
2
4.0
800/reel
50/tube
50/tube
50/tube
50/tube
D = 0.3
3
D = 0.5
D = t
VI10150C
4
Document Number: 89068
MAX.
D = 0.8
p
1.41
0.75
/T
100
10
4.0
-
-
-
-
-
DELIVERY MODE
Revision: 19-May-08
T
t
Tape and reel
5
p
D = 1.0
Tube
Tube
Tube
Tube
6
°C/W
UNIT
UNIT
mA
mA
µA
µA
V
V