SBE804 Sanyo Semiconductor Corporation, SBE804 Datasheet

SBE804

Manufacturer Part Number

SBE804

Description

Silicon Schottky Barrier Diode

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.SBE804.pdf (3 pages)

Current page: 1 of 3
Download datasheet (21Kb)

Ordering number : ENN7290

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Note : The specifications shown above are for each individual diode.

Marking : SG

Repetitive Peak Reverse Voltage

Non-repetitive Peak Reverse Surge Voltage

Average Output Current

Surge Forward Current

Junction Temperature

Storage Temperature

Reverse Voltage

Forward Voltage

Reverse Current

Interterminal Capacitance

Reverse Recovery Time

Thermal Resistance

•

Low forward voltage (V F max=0.55V).

Fast reverse recovery time (t rr max=10ns).

Composite type with 2 diodes contained in the CPH

package currently in use, improving the mounting

efficiency greatly.

The chips incorporated are both equivalent to

the SB02-03C.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

Symbol

Rth(j-a)

V RRM

V RSM

I FSM

Tstg

V R

V F

I O

I R

t rr

50Hz sine wave, 1 cycle

I R =50 A

I F =200mA

V R =15V

V R =10V, f=1MHz

I F =I R =(--)10mA, see specified Test Circuit.

SBE804

Conditions

Package Dimensions

unit : mm

1294

Conditions

0.95

2.9

30V, 200mA Rectifier

0.4

Silicon Schottky Barrier Diode

[SBE804]

min

O1002 TS IM TA-3611

Ratings

typ

0.15

Ratings

1 : Cathode

2 : Cathode

3 : Anode

4 : No Contact

5 : Anode

SANYO : CPH5

300

6.3

--55 to +125

SBE804

0.05

max

0.55

200

No.7290-1/3

C / W

Unit

Related parts for SBE804

SBE804 Summary of contents

Page 1

... Symbol Conditions = =200mA =15V =10V, f=1MHz =(--)10mA, see specified Test Circuit. Rth(j-a) Silicon Schottky Barrier Diode SBE804 30V, 200mA Rectifier [SBE804] 2.9 0. 0.05 2 0.95 0 Cathode 2 : Cathode 3 : Anode Contact 5 : Anode 0.4 SANYO : CPH5 ...

Page 2

... Forward Voltage 1 1.0 10 Reverse Voltage SBE804 t rr Test Circuit Duty 10 1000 5 2 100 1 0 0.01 0.5 0.6 0.7 0 ITR10723 2.8 f=1MHz 2.4 2.0 1.6 1.2 0.8 0 100 0 ...

Page 3

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2002. Specifications and information herein are subject to change without notice. SBE804 PS No.7290-3/3 ...

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