TPC8018-H TOSHIBA Semiconductor CORPORATION, TPC8018-H Datasheet - Page 4

• Manufacturer Part Number: TPC8018-H
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
100
0.1
50
40
20
10
10
20
16
12
30
0
1
8
4
0
0.1
0
0
10
6
8
Common source
V DS = 10 V
Pulse test
4
Drain-source voltage V
Gate-source voltage V
1
0.2
4.5
3.5
Drain current I
3.3
2
1
100
0.4
⎪Y
I
I
D
D
3.2
fs
– V
– V
⎪ – I
Ta = −55°C
3
DS
GS
Ta = −55°C
0.6
D
25
100
D
Common source
Ta = 25°C Pulse test
Common source
V DS = 10 V
Pulse test
10
4
GS
DS
(A)
V GS = 2.8V
0.8
25
(V)
(V)
5
3.1
2.9
3
100
1
6
4
0.16
0.12
0.08
0.04
100
0.2
50
40
30
20
10
10
0
1
0
0.1
0
0
6
5
10
Common source
Ta = 25°C
Pulse test
V GS = 10 V
Drain-source voltage V
Gate-source voltage V
4.5
0.4
2
4
3.8
4.5
Drain current I
3.6
1
R
0.8
V
DS (ON)
4
I
DS
D
– V
– V
3.5
DS
GS
– I
1.2
6
D
Common source
Ta = 25°C Pulse test
3.4
D
Common source
Ta = 25°C
Pulse test
10
GS
DS
(A)
V GS = 2.8V
I D = 18 A
1.6
(V)
(V)
TPC8018-H
8
4.5
9
3.3
3.2
3.1
3
2006-11-16
100
10
2