TPC8018-H TOSHIBA Semiconductor CORPORATION, TPC8018-H Datasheet - Page 3

• Manufacturer Part Number: TPC8018-H
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Gate switch charge
Drain reverse current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Pulse
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
Q
I
I
C
I
|Y
C
C
Q
GSS
DRP
DSS
V
t
t
Q
DSF
oss
on
off
gs1
SW
rss
t
t
iss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
Duty < = 1%, t
V
V
V
I
D
D
DR
V
GS
DS
DS
GS
GS
DS
DS
DD
DD
DD
= 10 mA, V
= 10 mA, V
GS
3
(Ta = 25°C)
= 18 A, V
= 30 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±16 V, V
= 4.5 V, I
= 10 V, I
∼ − 24 V, V
∼ − 24 V, V
∼ − 24 V, V
10 V
0 V
Test Condition
Test Condition
w
D
D
D
GS
GS
GS
GS
D
GS
GS
GS
GS
= 10 µs
= 1 mA
= 9 A
DS
= 9 A
= 9 A
⎯
= 0 V
= 0 V
= −20 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
= 5 V, I
= 10 V, I
= 0 V
I
D
V
= 9 A
DD
D
∼ − 15 V
D
D
= 18 A
= 18 A
= 18 A
V
OUT
Min
Min
1.1
30
15
25
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2265
1045
Typ.
Typ.
255
4.8
3.5
7.3
⎯
⎯
⎯
⎯
⎯
50
14
11
50
38
21
12
⎯
⎯
5
9
TPC8018-H
2006-11-16
Max
Max
−1.2
±10
2.3
6.2
4.6
10
72
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
µA
µA
pF
nC
ns
V
V
S
A
V