HBA114TS6R Cystech Electonics Corp., HBA114TS6R Datasheet - Page 2

• Manufacturer Part Number: HBA114TS6R
• Description: Dual Pnp Digital Transistors
• Manufacturer: Cystech Electonics Corp.

Absolute Maximum Ratings
Note: 150mW per element must not be exceeded.
Characteristics
HBA114TS6R
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation
Voltage
DC Current Gain
Input Resistance
Transition Frequency
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Parameter
(Each Transistor, Ta=25℃)
CYStech Electronics Corp.
Symbol
V
V
V
V
I
I
CE(sat)
h
CBO
EBO
CBO
CEO
EBO
f
(Each Transistor,Ta=25℃)
R
FE
T
Min. Typ. Max. Unit
100
-50
-50
-5
7
-
-
-
-
Symbol
V
V
V
Tstg
Pd
I
Tj
CBO
CEO
EBO
C
250
0.1
10
-
-
-
-
-
-
-0.5
-0.5
-0.3
600
13
-
-
-
-
MHz V
µA
µA
k
V
V
V
V
-
I
I
I
V
V
I
V
-
C
C
E
C
CB
EB
CE
CE
=-50µA
=-50µA
=-1mA
=-10mA, I
-55~+150
=-4V
=-5V, I
=-10V, I
* Transition frequency of the device
=-50V
Limits
-100
-50
-50
150
-5
200
Test Conditions
C
(Note)
CYStek Product Specification
=-1mA
C
B
Spec. No. : C254S6R
Issued Date : 2003.05.23
Revised Date :
Page No. : 2/4
=-5mA, f =100MHz *
=-1mA
Unit
mW
mA
V
V
V
C
C