HBA114TS6R Cystech Electonics Corp., HBA114TS6R Datasheet
HBA114TS6R
Related parts for HBA114TS6R
HBA114TS6R Summary of contents
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... Mounting cost and area can be cut in half. Transistor elements are independent, eliminating interference Complements the HBC114TS6R Equivalent Circuit HBA114TS6R TR1 1=10k , R 2= HBA114TS6R CYStech Electronics Corp. TR2 Spec. No. : C254S6R Issued Date : 2003.05.23 Revised Date : Page No. : 1/4 SOT-363R CYStek Product Specification ...
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... Transistor, Ta=25℃) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain Input Resistance Transition Frequency HBA114TS6R CYStech Electronics Corp. (Each Transistor,Ta=25℃) Symbol V CBO V CEO V EBO ...
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... Collector Current---IC(mA) Power Derating Curves 250 Dual 200 Single 150 100 100 Ambient Temperature---TA(℃) HBA114TS6R CYStech Electronics Corp. 1000 100 HFE@VCE=5V 10 100 150 200 Spec. No. : C254S6R Issued Date : 2003.05.23 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current VCE(SAT)@IC=10IB ...
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... CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. HBA114TS6R CYStech Electronics Corp. Style: Pin 1 ...