BZD142 NXP Semiconductors, BZD142 Datasheet - Page 3

• Manufacturer Part Number: BZD142
• Description: Zenblocktm; Zener With Integrated Blocking Diode
• Manufacturer: NXP Semiconductors

Philips Semiconductors
ELECTRICAL CHARACTERISTICS ZENER/TVS
T
Notes
1. To complete the type number the suffix is added to the basic type number, e.g. BZD142-68.
2. Non-repetitive peak reverse current in accordance with “IEC 60060-1, Section 8” (10/1000 s pulse); see Fig.5.
ELECTRICAL CHARACTERISTICS BLOCKING CODE
T
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m, see Fig.2.
2000 Dec 19
68
75
82
91
100
110
120
130
150
160
V
I
C
R
R
j
j
R
SUFFIX
NUMBER
SYMBOL
SYMBOL
= 25 C unless otherwise specified.
= 25 C unless otherwise specified.
(BR)R
d
th j-tp
th j-a
ZenBlock
For more information please refer to the “General Part of associated Handbook” .
TYPE
(1)
reverse avalanche
breakdown voltage
reverse current
diode capacitance
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
V
WORKING VOLTAGE
MIN.
108
117
135
149
TM
Z
61
68
74
82
90
99
(V) at I
PARAMETER
; zener with integrated blocking diode
NOM.
100
110
120
130
150
160
68
75
82
91
Z
(see Fig.4)
MAX.
100
110
121
132
143
165
171
PARAMETER
75
82
90
I
V
V
f = 1 MHz; V
see Fig.4
TEMPERATURE
R
S
COEFFICIENT
R
R
MIN.
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.07
= 0.1 mA
Z
= 600 V
= 600 V; T
(%/K) at I
CONDITIONS
MAX.
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
R
j
test
= 0 V;
= 150 C
3
CURRENT
I
test
TEST
10
10
10
5
5
5
5
5
5
5
(mA)
700
lead length = 10 mm
note 1
MIN.
CONDITIONS
V
MAX.
103.5
94.4
114
126
139
152
167
185
204
224
(CL)R
(V)
CLAMPING
VOLTAGE
15
(note 2)
at I
TYP.
0.97
0.88
0.79
0.72
0.66
0.60
0.54
0.49
0.45
106
(A)
RSM
5
100
Preliminary specification
REVERSE CURRENT
VALUE
IR ( A)
MAX.
MAX.
120
at STAND-OFF
60
5
5
5
5
5
5
5
5
5
5
VOLTAGE
BZD142
V
pF
at V
A
A
UNIT
UNIT
K/W
K/W
100
110
120
130
56
62
68
75
82
91
R
(V)