UMZ1N ON Semiconductor, UMZ1N Datasheet - Page 4

• Manufacturer Part Number: UMZ1N
• Description: Complementary Dual General Purpose Transistors
• Manufacturer: ON Semiconductor

1000
100
10
280
240
200
160
120
0.1
80
40
10
0
1
1
1
0
6.0 mA
T
V
A
CE
−25°C
= 100°C
25°C
Figure 7. Collector Saturation Voltage
5.0 mA
V
= 6.0 V
CE
1
I
, COLLECTOR−EMITTER VOLTAGE (V)
C
Figure 9. DC Current Gain
Figure 11. V
I
, COLLECTOR CURRENT (mA)
C
, COLLECTOR CURRENT (mA)
10
3.0 mA
10
2
T
A
BE(sat)
Typical Electrical Characteristics: NPN Transistor
= 25°C
3
versus I
100
100
4
2.0 mA
T
I
C
C
A
I
B
/I
= 25°C
B
= 0.2 mA
5
= 10
1.0 mA
0.5 mA
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1000
UMZ1NT1
1000
6
4
10,000
1000
1000
0.01
100
100
0.1
0.1
10
10
1
1
1
1
0
COMMON EMITTER
V
CE
T
V
I
0.1
C
A
CE
= 6 V
/I
−25°C
= 100°C
25°C
B
= 1.0 V
Figure 12. Base−Emitter Voltage
= 10
0.2
V
Figure 10. V
I
I
BE
C
Figure 8. DC Current Gain
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
, BASE−EMITTER VOLTAGE (V)
0.3
10
10
0.4
25°C
CE(sat)
0.5
T
T
A
A
= 100°C
0.6
= 100°C
versus I
100
100
0.7
−25°C
C
0.8
25°C
−25°C
0.9
1000
1000
1