UMZ1N ON Semiconductor, UMZ1N Datasheet - Page 2

• Manufacturer Part Number: UMZ1N
• Description: Complementary Dual General Purpose Transistors
• Manufacturer: ON Semiconductor

3. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
Q1: NPN
ELECTRICAL CHARACTERISTICS
Q2: PNP
ELECTRICAL CHARACTERISTICS
Collector−Emitter Breakdown Voltage
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector−Base Cutoff Current
Collector−Emitter Cutoff Current
DC Current Gain (Note 3)
Collector−Emitter Saturation Voltage
Transistor Frequency
Collector−Emitter Breakdown Voltage
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector−Base Cutoff Current
Collector−Emitter Cutoff Current
DC Current Gain (Note 3)
Collector−Emitter Saturation Voltage
Transistor Frequency
(I
(I
(I
(V
(V
(V
(V
(V
(I
(I
(I
(I
(V
(V
(V
(V
(V
(I
C
C
E
C
C
C
E
C
CB
CE
CE
CE
CE
CB
CE
CE
CE
CE
= 10 mAdc, I
= 10 mAdc, I
= 2.0 mAdc, I
= 10 mAdc, I
= 100 mAdc, I
= 2.0 mAdc, I
= 10 mAdc, I
= 100 mAdc, I
= 45 Vdc, I
= 10 Vdc, I
= 30 Vdc, I
= 30 Vdc, I
= 6.0 Vdc, I
= 45 Vdc, I
= 10 Vdc, I
= 30 Vdc, I
= 30 Vdc, I
= 6.0 Vdc, I
C
C
E
E
E
B
B
B
E
B
B
B
B
B
C
C
= 0)
= 0)
B
= 0)
= 0)
B
= 0)
= 0)
= 0)
= 0, T
= 0)
= 0)
= 0)
= 0, T
= 0)
= 0)
= 2.0 mAdc)
= 2.0 mAdc)
= 10 mAdc)
= 10 mAdc)
A
A
= 80°C)
= 80°C)
Characteristic
Characteristic
(T
(T
A
A
= 25°C unless otherwise noted)
= 25°C unless otherwise noted)
http://onsemi.com
UMZ1NT1
2
V
V
V
V
V
V
Symbol
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
(BR)CEO
(BR)CBO
(BR)EBO
I
I
CE(sat)
I
I
CE(sat)
h
h
CBO
CEO
CBO
CEO
f
f
FE
FE
T
T
−0.15
−200
0.15
−7.0
Min
200
Min
−50
−60
7.0
50
60
−
−
−
−
−
−
−
−
−
−
Typ
Typ
114
142
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−400
Max
0.25
Max
−0.1
−0.1
−2.0
−1.0
−0.3
400
0.1
0.1
2.0
1.0
−
−
−
−
−
−
−
−
mAdc
mAdc
mAdc
mAdc
mAdc
mAdc
mAdc
mAdc
MHz
MHz
Unit
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
−
−