VN771P STMicroelectronics, VN771P Datasheet

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VN771P

Manufacturer Part Number
VN771P
Description
Quad Smart Power Solid State Relay For Complete H Bridge Configurations
Manufacturer
STMicroelectronics
Datasheet

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VN771P
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Part Number:
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* Total resistance of one side in bridge configuration
DESCRIPTION
The VN771P is a device formed by three
monolithic chips housed in a standard SO28
package: a double high side and two low side
switches. Both the double high side and low side
switches are made using STMicroelectronics
VIPower technology. This device is suitable to
drive a DC motor in a bridge configuration as well
as to be used as a quad switch for any low
voltage application. The dual high side switches
have built-in thermal shut-down to protect the
chip from over temperature and short circuit,
status output to provide indication for open load
in off and on state, overtemperature conditions
and stuck-on to V
two OMNIFET types (fully autoprotected Power
MOSFET in VIPower
built-in thermal shut-down, linear current limitation
and overvoltage clamping. Fault feedback for
thermal
monitoring the voltage at the input pin.
DUAL HIGH-SIDE SWITCH
From the falling edge of the input signal, the
status output, initially low
condition
on-state), will go back to a high state with a
different delay in case of overtemperature (tpovl)
and in case of open open load (
This feature allows to discriminate the nature of
the detected fault. To protect the device against
September 1998
VN771P
SUITED AS LOW VOLTAGE BRIDGE
LINEAR CURRENT LIMITATION
VERY LOW STAND-BY POWER
DISSIPATION
SHORT CIRCUIT PROTECTED
STATUS FLAG DIAGNOSTICS
OPEN DRAIN DIAGNOSTICS OUTPUT
INTEGRATED CLAMPING CIRCUITS
UNDER-VOLTAGE PROTECTION
ESD PROTECTION
T YPE
intervention
(overtemperature
R
0.135
DS( on)
FOR COMPLETE H BRIDGE CONFIGURATIONS
CC
*
. The low side switches are
QUAD SMART POWER SOLID STATE RELAY
can
technology). They have
14 A
I
OUT
be
to signal a fault
or
tpol
) respectively.
detected
open
26 V
V
CC
load
by
short circuit and over current condition, the
thermal protection turns the integrated Power
MOS off at a minimum junction temperature of
140
the switch is automatically turned on again. In
short circuit the protection reacts with virtually no
delay, the sensor (one for each channel) being
located inside each of the two Power MOS areas.
This positioning allows the device to operate with
one channel in automatic thermal cycling and the
other one on a normal load. An internal function
of the devices ensures the fast demagnetization
of inductive loads with a typical voltage (V
of -18V. This function allows to greatly reduces
the power dissipation according to the formula:
P
where f = switching frequency and
V
In this device if the GND pin is disconnected, with
V
off.
LOW-SIDE SWITCHES
During normal operation, the Input pin is
electrically connected to the gate of the internal
power MOSFET. The device then behaves like a
standard power MOSFET and can be used as a
switch from DC to 50 KHz. The only difference
from the user’s standpoint is that a small DC
current (I
supply the internal circuitry.
dem
demag
CC
o
not exceeding 16V, both channel will switch
= 0.5 L
C. When this temperature returns to 125
= demagnetization voltage.
iss
) flows into the Input pin in order to
load
(I
load
)
SO-28
2
[(V
CC
+V
VN771P
demag
)/V
demag
demag
] f
1/11
o
C
)

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VN771P Summary of contents

Page 1

... INTEGRATED CLAMPING CIRCUITS UNDER-VOLTAGE PROTECTION ESD PROTECTION DESCRIPTION The VN771P is a device formed by three monolithic chips housed in a standard SO28 package: a double high side and two low side switches. Both the double high side and low side switches are made using STMicroelectronics VIPower technology ...

Page 2

... VN771P BLOCK DIAGRAM 2/11 ...

Page 3

... Input of Switch 2 (high-side switch) 12, 14, 15, 18 DRAIN 4 Drain of Switch 4 (low-side switch) 13 INPUT 4 Input of Switch 4 (low-side switch) 16 URCE 4 Source of Switch 4 (low-side switch) 20 URCE 2 Source of Switch 2 (high-side switch) 22 URCE 1 Source of Switch 1 (high-side switch) 26 URCE 3 Source of Switch 3 (low-side switch) VN771P FUNCT ION 3/11 ...

Page 4

... VN771P PROTECTION CIRCUITS DUAL HIGH SIDE SWITCH The simplest way to protect the device against a continuous reverse battery voltage (-26V insert a a small resistor between pin 2 (GND) and ground. The suggested resistance value is about 150 . In any case the maximum voltage drop on this resistor should not overcome 0 ...

Page 5

... DS(on 0.065 1 VN771P Value Uni - 2000 -40 to 150 C o -55 to 150 C Value Unit -28 A 2000 ...

Page 6

... VN771P ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (continued) SWITCHING Symbol Parameter t (^) Turn-on Delay Time d(on) out Output Current t (^) Rise Time O f Output R r out Current t (^) Turn-off Delay Time d(o ff) out Output Current t (^) Fall Time Of O utput R f out Current ...

Page 7

... Test Co nditio ns Min 0 Test Co nditio ns Min MHz VN771P Typ . Max. Unit 500 2500 s Typ . Max. Unit -0 200 A 250 500 A Typ . Max. Unit ...

Page 8

... VN771P ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES (continued) SWITCHING (**) Symbol Parameter t Turn-on Delay Time V d Rise Time Turn-off Delay Time (see figure 3) d Fall Time f t Turn-on Delay Time V d Rise Time Turn-off Delay Time ...

Page 9

... TYPICAL APPLICATION DIAGRAM VN771P 9/11 ...

Page 10

... VN771P SO-28 MECHANICAL DATA mm DIM. MIN. TYP 0.10 b 0.35 b1 0. 17.7 E 10.00 e 1.27 e3 16.51 F 7.40 L 0.40 S 10/11 inch MAX. MIN. TYP. 2.65 0.30 0.004 0.49 0.013 0.32 0.009 0.020 45 (typ.) 18.1 0.697 10.65 0.393 0.050 0.650 7.60 0.291 1.27 0.016 8 (max.) MAX. 0.104 0.012 0.019 0.012 0.713 0.419 0.299 0.050 0016572 ...

Page 11

... The ST logo is a registered trademark of STMicroelectronics 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . VN771P 11/11 ...

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