SI6423DQ Vishay, SI6423DQ Datasheet - Page 4
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SI6423DQ
Manufacturer Part Number
SI6423DQ
Description
P-channel 12-v D-s Mosfet
Manufacturer
Vishay
Datasheet
1.SI6423DQ.pdf
(6 pages)
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Si6423DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.6
0.4
0.2
0.0
- 50
0.01
0.1
2
1
10
- 25
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
I
D
0
= 400 µA
T
Threshold Voltage
J
- Temperature (°C)
25
10
-3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
100
1
10
0.1
-2
by R
* V
Limited
Safe Operating Area, Junction-to-Case
125
GS
DS
> minimum V
(on)
V
*
150
DS
Square Wave Pulse Duration (s)
Single Pulse
- Drain-to-Source Voltage (V)
T
C
10
1
= 25 °C
-1
GS
at which R
DS(on)
10
60
50
40
30
20
10
0
1
10
1 ms
10 ms
100 ms
1 s
10 s
DC
is specified
-2
Single Pulse Power, Junction-to-Ambient
10
100
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
Time (s)
t
A
1
1
= P
S-80682-Rev. B, 31-Mar-08
t
Document Number: 72257
2
DM
Z
thJA
100
thJA
t
t
1
2
(t)
= 100 °C/W
10
600
100