SI6423DQ Vishay, SI6423DQ Datasheet

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SI6423DQ

Manufacturer Part Number
SI6423DQ
Description
P-channel 12-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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SI6423DQ-T1-BE3
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Part Number:
SI6423DQ-T1-GE3
Manufacturer:
VISHAY
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21 808
Part Number:
SI6423DQ-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72257
S-80682-Rev. B, 31-Mar-08
Ordering Information: Si6423DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
V
DS
- 12
(V)
G
D
S
S
1
2
3
4
0.0085 at V
0.0106 at V
0.014 at V
TSSOP-8
Top View
R
DS(on)
J
a
= 150 °C)
GS
a
GS
GS
= - 1.8 V
(Ω)
= - 4.5 V
= - 2.5 V
P-Channel 12-V (D-S) MOSFET
a
8
7
6
5
D
S
S
D
a
A
I
= 25 °C, unless otherwise noted
- 9.5
- 8.5
- 7.5
D
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• Load Switch
G
Symbol
Symbol
T
R
R
J
V
V
P-Channel MOSFET
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
stg
S*
D
®
Power MOSFET
Typical
- 1.35
- 9.5
10 s
100
1.5
1.0
- 8
60
35
* Source Pins 2, 3, 6 and 7
must be tied common.
- 55 to 150
- 12
- 30
± 8
Steady State
Maximum
- 0.95
- 8.2
- 6.5
1.05
0.67
120
83
45
Vishay Siliconix
Si6423DQ
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI6423DQ Summary of contents

Page 1

... V GS TSSOP Top View Ordering Information: Si6423DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) a ...

Page 2

... Si6423DQ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72257 S-80682-Rev. B, 31-Mar-08 8000 6400 4800 3200 1600 °C J 0.8 1.0 1.2 Si6423DQ Vishay Siliconix C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1.4 1.2 1.0 0.8 0 ...

Page 4

... Si6423DQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0 400 µA D 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited (on 0 °C C Single Pulse 0.01 0 Drain-to-Source Voltage (V) ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72257. Document Number: 72257 S-80682-Rev. B, 31-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si6423DQ Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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