SI5509DC Vishay, SI5509DC Datasheet - Page 9

• Manufacturer Part Number: SI5509DC
• Description: N- And P-channel 20-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 73629
S–60417—Rev. A, 20-Mar-06
100.00
10.00
0.00
1.00
0.10
0.01
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.0
–50
Source-Drain Diode Forward Voltage
–25
T
V
A
SD
= 125 _C
0
– Source-to-Drain Voltage (V)
T
0.4
Threshold Voltage
J
– Temperature (_C)
25
50
T
75
A
0.8
I
D
= 25 _C
0.001
= 250 mA
0.01
100
100
0.1
10
1
0.1
125
*V
_
Limited by r
Safe Operating Area, Junction-to-Case
GS
u minimum V
1.2
150
V
New Product
DS
Single Pulse
DS(on)
T
– Drain-to-Source Voltage (V)
A
= 25 _C
1
GS
at which r
DS(on)
10
is specified
0.3
0.2
0.1
0.0
50
40
30
20
10
0
1 s
10 ms
100 ms
10 s
10
1
dc
–4
On-Resistance vs. Gate-to-Source Voltage
10
100
–3
V
2
GS
10
– Gate-to-Source Voltage (V)
–2
Single Pulse Power
Time (sec)
10
Vishay Siliconix
T
–1
A
3
= 25 _C
1
Si5509DC
T
A
10
= 125 _C
4
www.vishay.com
I
D
= 3.9 A
100
600
5
9