SI5509DC Vishay, SI5509DC Datasheet - Page 4

• Manufacturer Part Number: SI5509DC
• Description: N- And P-channel 20-v D-s Mosfet
• Manufacturer: Vishay

www.vishay.com
4
0.20
0.15
0.10
0.05
0.00
15
12
On-Resistance vs. Drain Current and Gate Voltage
9
6
3
0
5
4
3
2
1
0
0.0
0
0
V
I
D
GS
= 4 A
0.5
= 2.5 V
V
3
1
DS
Q
Output Characteristics
g
– Drain-to-Source Voltage (V)
I
D
– Total Gate Charge (nC)
V
– Drain Current (A)
GS
1.0
Gate Charge
V
6
2
GS
= 10 V
= 5 V thru 3.5 V
V
1.5
GS
9
V
3
GS
= 3 V
= 16 V
V
V
V
GS
GS
GS
V
2.0
GS
= 4.5 V
12
= 2.5 V
4
= 1.5 V
= 2 V
_
2.5
15
5
New Product
600
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
0
–50
0.0
0
On-Resistance vs. Junction Temperature
C
rss
–25
0.5
V
V
4
T
DS
GS
T
C
Transfer Characteristics
J
0
= 25 _C
– Junction Temperature (_C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
1.0
T
C
25
Capacitance
= 125 _C
8
Vishay Siliconix
1.5
C
50
C
oss
iss
S–60417—Rev. A, 20-Mar-06
V
I
Document Number: 73629
D
12
GS
= 5 A
75
Si5509DC
2.0
= 4.5 V
T
C
V
I
100
D
= –55 _C
GS
= 3.9 A
16
= 2.5 V
2.5
125
150
3.0
20