SI5482DU Vishay, SI5482DU Datasheet - Page 4

• Manufacturer Part Number: SI5482DU
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

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4
Si5482DU
Vishay Siliconix
1.4
1.2
1.0
0.8
0.6
0.4
10
40
1
0.0
–50
–25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
– Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
– Temperature (_C)
25
T
J
= 150 _C
0.6
50
I
D
75
= 250 mA
0.8
T
J
100
= 25 _C
1.0
0.01
100
_
0.1
125
10
1
0.1
Safe Operating Area, Junction-to-Ambient
*V
1.2
150
GS
*Limited by r
New Product
u minimum V
V
DS
– Drain-to-Source Voltage (V)
Single Pulse
1
DS(on)
T
A
= 25 _C
GS
at which r
0.040
0.035
0.030
0.025
0.020
0.015
0.010
DS(on)
10
10
40
30
20
50
0.001
0
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.01
100 ms
10 ms
100 ms
1 ms
1 s
BVDSS Limited
10 s
dc
T
2
A
V
= 25 _C
GS
100
– Gate-to-Source Voltage (V)
0.1
4
Time (sec)
1
S–52606—Rev. A, 02-Jan-06
T
A
Document Number: 73594
= 125 _C
6
10
I
D
8
= 7.4 A
100
1000
10