SI5441BDC Vishay, SI5441BDC Datasheet - Page 4

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SI5441BDC

Manufacturer Part Number
SI5441BDC
Description
P-channel 2.5-v G-s Mosfet
Manufacturer
Vishay
Datasheet

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4
Si5441BDC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.1
−0.2
0.4
0.3
0.2
0.1
0.0
0.01
0.1
−50
2
1
10
−4
−25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
T
Threshold Voltage
J
− Temperature (_C)
25
10
Single Pulse
−3
50
I
D
= 250 mA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
100
10
1
−2
0.1
*V
125
*r
Limited
GS
DS(on)
I
D(on)
Single Pulse
T
Square Wave Pulse Duration (sec)
u minimum V
C
references fixed
150
V
= 25_C
DS
Limited
New Product
− Drain-to-Source Voltage (V)
Safe Operating Area
10
1
−1
BV
GS
DSS
at which r
Limited
DS(on)
10
1
50
40
30
20
10
0
is specified
10
I
DM
−3
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
Limited
10
100
−2
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
Single Pulse Power
JM
10
−1
− T
Time (sec)
t
A
1
= P
t
2
DM
1
Z
thJA
thJA
100
S-42240—Rev. A, 13-Dec-04
t
t
1
2
(t)
Document Number: 73207
= 80_C/W
10
100
600
600

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