SI5441BDC Vishay, SI5441BDC Datasheet - Page 3

• Manufacturer Part Number: SI5441BDC
• Description: P-channel 2.5-v G-s Mosfet
• Manufacturer: Vishay

Document Number: 73207
S-42240—Rev. A, 13-Dec-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
V
I
D
GS
DS
Source-Drain Diode Forward Voltage
= 6.1 A
0.2
On-Resistance vs. Drain Current
= 2.5 V
= 10 V
4
3
V
SD
Q
g
− Source-to-Drain Voltage (V)
I
0.4
− Total Gate Charge (nC)
D
− Drain Current (A)
Gate Charge
8
6
T
0.6
J
= 150_C
12
9
0.8
V
V
T
GS
GS
16
12
J
= 25_C
1.0
= 3.6 V
= 4.5 V
1.2
20
15
New Product
1200
1000
0.12
0.10
0.08
0.06
0.04
0.02
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
V
I
rss
−25
D
GS
= 6.1 A
C
= 4.5 V
1
iss
4
T
V
V
0
J
GS
DS
C
− Junction Temperature (_C)
oss
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
25
Capacitance
2
8
Vishay Siliconix
50
I
D
= 6.1 A
Si5441BDC
12
3
75
100
16
www.vishay.com
4
125
150
20
5
3