SUD50N04-06P Vishay, SUD50N04-06P Datasheet - Page 4

• Manufacturer Part Number: SUD50N04-06P
• Description: N-channel 40-v D-s 175c Mosfet
• Manufacturer: Vishay

SUU/SUD50N04-06P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
0.01
100
0.1
400
320
240
160
10
10
80
1
8
6
4
2
0
0
0.001
0.0
0
Single Pulse Power, Junction-to-Ambient
I
D
Source-Drain Diode Forward Voltage
= 30 A
0.2
V
20
0.01
DS
T
V
= 10 V
J
SD
Q
= 150 °C
g
- Source-to-Drain Voltage (V)
0.4
- Total Gate Charge (nC)
40
V
Gate Charge
DS
0.1
Time (sec)
= 20 V
0.6
60
T
J
= 25 °C
1
0.8
80
V
DS
= 30 V
10
100
1.0
1.2
120
100
- 0.1
- 0.4
- 0.7
- 1.0
- 1.3
0.5
0.2
400
320
240
160
1.8
1.5
1.2
0.9
0.6
2.1
80
- 50
0
0
- 50
0 .
0
I
D
1
On-Resistance vs. Junction Temperature
- 25
= 250 µA
I
Single Pulse Power, Junction-to-Case
- 25
D
= 15 A
I
D
= 5 mA
0
0
0.01
T
J
- Junction Temperature (°C)
Threshold Voltage
T
25
25
J
- Temperature (°C)
Time (sec)
50
50
0.1
S-70197-Rev. A, 29-Jan-07
75
Document Number: 74443
75
V
GS
100
100
= 4.5 V
125
1
125
V
GS
150
150
= 10 V
175
175
1
0