SI2306BDS Vishay, SI2306BDS Datasheet - Page 3

• Manufacturer Part Number: SI2306BDS
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73234
S-80642-Rev. B, 24-Mar-08
0.10
0.08
0.06
0.04
0.02
0.00
10
0.1
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 3.5 A
2
0.2
= 15 V
On-Resistance vs. Drain Current
1
V
GS
V
4
SD
T
= 4.5 V
Q
J
- Source-to-Drain Voltage (V)
g
= 150 °C
0.4
2
I
- Total Gate Charge (nC)
D
6
Gate Charge
- Drain Current (A)
0.6
3
8
10
0.8
4
V
12
GS
T
J
= 10 V
= 25 °C
1.0
5
14
16
1.2
6
400
350
300
250
200
150
100
1.6
1.4
1.2
1.0
0.8
0.6
0.5
0.4
0.3
0.2
0.1
0.0
50
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
C
= 3.5 A
rss
5
= 10 V
V
2
V
DS
T
GS
0
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
10
Capacitance
25
4
C
C
15
50
oss
Vishay Siliconix
iss
Si2306BDS
I
D
6
75
= 3.5 A
20
www.vishay.com
100
8
25
125
150
30
10
3