SI2306BDS Vishay, SI2306BDS Datasheet

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SI2306BDS

Manufacturer Part Number
SI2306BDS
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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SI2306BDS-T1-GE3
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2 815
Notes:
a. Surface Mounted on FR4 board, t ≤ 5 s.
b. Pulse width limited by maximum junction temperature.
c. Surface Mounted on FR4 board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 73234
S-80642-Rev. B, 24-Mar-08
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
30
(V)
0.065 at V
0.047 at V
R
DS(on)
GS
GS
(Ω)
J
a, b
= 4.5 V
= 10 V
= 150 °C)
a
Ordering Information: Si2306BDS-T1-E3 (Lead (Pb)-free)
N-Channel 30-V (D-S) MOSFET
a, b
I
G
S
D
4.0
3.5
(A)
a, b
1
2
Si2306BDS (L6 )*
* Marking Code
A
(SOT-23)
Top View
Q
TO-236
= 25 °C, unless otherwise noted
Steady State
Steady State
g
Si2306BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
T
T
T
T
3.0
(Typ.)
A
A
A
A
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
3
D
FEATURES
• Halogen-free Option Available
• TrenchFET
• 100 % R
Symbol
Symbol
T
R
R
J
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
1.04
1.25
130
5 s
4.0
3.5
0.8
80
60
- 55 to 150
± 20
30
20
Steady State
Maximum
3.16
0.62
0.75
0.48
100
166
2.7
75
Vishay Siliconix
Si2306BDS
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI2306BDS Summary of contents

Page 1

... V (V) R (Ω) DS DS(on) 0.047 0.065 4 Ordering Information: Si2306BDS-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si2306BDS Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted A Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage Dynamic Gate Charge Total Gate Charge Gate-Source Charge ...

Page 3

... Source-Drain Diode Forward Voltage Document Number: 73234 S-80642-Rev. B, 24-Mar-08 400 350 300 250 200 150 100 °C J 0.8 1.0 1.2 Si2306BDS Vishay Siliconix C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 3 ...

Page 4

... Si2306BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.2 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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