SI2319DS Vishay, SI2319DS Datasheet - Page 4

• Manufacturer Part Number: SI2319DS
• Description: P-channel 40-v D-s Mosfet
• Manufacturer: Vishay

Si2319DS
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.1
−0.2
−0.4
20
10
0.6
0.4
0.2
0.0
1
−50
0
−25
Source-Drain Diode Forward Voltage
0.2
V
I
D
SD
= 250 mA
0
T
J
− Source-to-Drain Voltage (V)
T
= 150_C
Threshold Voltage
0.4
J
− Temperature (_C)
25
0.6
50
75
100.0
10.0
0.01
0.8
1.0
0.1
T
0.1
100
J
= 25_C
Limited by
1.0
Safe Operating Area, Junction-to-Case
r
DS(on)
125
Single Pulse
V
T
DS
Square Wave Pulse Duration (sec)
A
150
1.2
= 25_C
− Drain-to-Source Voltage (V)
1
10
10
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
8
6
4
2
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
10 ms
100 ms
1 ms
10 ms
100 ms
dc, 100 s, 10 s, 1 s
100
0.1
2
V
GS
− Gate-to-Source Voltage (V)
Single Pulse Power
4
Time (sec)
1
Single Pulse
T
A
I
= 25_C
D
= 3 A
S-40844—Rev. B, 03-May-04
10
6
Document Number: 72315
100
8
10
1000