SI2319DS Vishay, SI2319DS Datasheet - Page 2

• Manufacturer Part Number: SI2319DS
• Description: P-channel 40-v D-s Mosfet
• Manufacturer: Vishay

Si2319DS
Vishay Siliconix
Notes
a.
b.
c.
www.vishay.com
2
SPECIFICATIONS (T
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On Resistance
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn On Time
Turn-On Time
Turn-Off Time
Turn-Off Time
Pulse test: PW v300 ms duty cycle v2%.
For DESIGN AID ONLY, not subject to production testing.
Switching time is essentially independent of operating temperature. S FaxBack 408-970-5600
b
c
Parameter
a
a
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
Symbol
V
V
r
r
(BR)DSS
I
DS(
DS(on)
t
t
I
I
I
C
GS(th)
D(on)
V
C
C
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
oss
t
SD
rss
t
iss
fs
gs
gd
r
f
g
)
V
V
DS
DS
I
I
V
D
D
V
V
= −40 V, V
V
V
V
V
V
DS
GS
I
V
V
DS
= −20 V, V
^ −1 0 A V
^ −1.0 A, V
DS
S
Test Conditions
DS
GS
GS
DD
DS
DS
= −1.25 A, V
v −5 V, V
= −4.5 V, I
= −20 V, V
= V
= 0 V, V
= −10 V, I
= 0 V, I
= −40 V, V
= −20 V, R
= −5 V, I
I
I
GS
D
D
R
g
g
GS
^ −3 A
^ −3 A
, I
GS
= 6 W
D
D
GS
GEN
GEN
= 0 V, T
D
= −250 mA
D
GS
= −250 mA
GS
= 0, f = 1 MHz
D
GS
GS
= −3.0 A
= "20 V
= −3.0 A
L
= −2.4 A
= −10 V
= −10 V
= −4 5 V
= −4.5 V
=20 W
= 0 V
= 0 V
J
= 55_C
Min
−1.0
−40
−6
Limits
0.065
0.100
Typ
−0.8
11.3
470
7.0
1.7
3.3
85
65
15
25
25
7
S-40844—Rev. B, 03-May-04
Document Number: 72315
"100
Max
0.082
0.130
−3.0
−1.2
−10
−1
17
15
25
40
40
Unit
nC
nA
mA
mA
pF
ns
ns
W
W
V
V
A
S
V