SI8901EDB Vishay, SI8901EDB Datasheet - Page 3

• Manufacturer Part Number: SI8901EDB
• Description: Bi-directional P-channel 20-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 72941
S-50066—Rev. B, 17-Jan-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0.20
0.16
0.12
0.08
0.04
0.00
10
8
6
4
2
0
0.0
I
S1S2
0
0
On-Resistance vs. Gate-to-Source Voltage
= 1 A
V
0.5
GS
On-Resistance vs. Drain Current
V
V
2
1
GS
= 1.8 V
DS
Output Characteristics
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
I
1.0
D
I
V
S1S2
− Drain Current (A)
GS
4
2
= 5 thru 2 V
= 5 A
1.5
6
3
2.0
V
V
GS
GS
= 2.5 V
= 4.5 V
8
4
2.5
1.5 V
3.0
10
5
−0.1
−0.2
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.3
0.2
0.1
0.0
10
8
6
4
2
0
−50
−50
0.0
On-Resistance vs. Junction Temperature
−25
−25
V
I
S1S2
GS
0.4
V
= 4.5 V
GS
= 1 A
T
J
0
0
Transfer Characteristics
− Junction Temperature (_C)
− Gate-to-Source Voltage (V)
Threshold Voltage
T
25_C
T
J
C
− Temperature (_C)
25
25
= 125_C
0.8
I
S1S2
Vishay Siliconix
50
= 350 mA
50
1.2
Si8901EDB
75
75
−55_C
100
100
www.vishay.com
1.6
125
125
150
150
2.0
3