SI8435DB Vishay, SI8435DB Datasheet - Page 5

• Manufacturer Part Number: SI8435DB
• Description: P-channel 1.5-v G-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS T
Document Number: 73559
S-72198-Rev. C, 22-Oct-07
0.001
0.01
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
80
60
40
20
100
0.1
10
0
1
0.001
- 50
0.1
Single Pulse Power, Juncion-to-Ambient
Limited by r
* V
Safe Operating Area, Junction-to-Ambient
- 25
GS
Single Pulse
T
A
= 25 °C
> minimum V
V
0.01
DS
0
DSon
Threshold Voltage
– Drain-to-Source V oltage (V)
T
J
*
1
– T emperature ( °C)
25
Time (s)
GS
BVDSS Limited
0.1
50
at which r
I
DM
Limited
75
10
DS(on)
100
A
1
is
= 25 °C, unless otherwise noted
P (t) = 100 ms
P (t) = 10 ms
P (t) = 10 s
DC
P (t) = 1 s
specified
125
100
150
New Product
10
** The power dissipation P
using junction-to-foot thermal resistance, and is more useful
in settling the upper dissipation limit for cases where
additional heatsinking is used. It is used to determine the
current rating, when this rating falls below the package limit.
12
8
4
0
8
6
4
2
0
0
0
25
25
T – Case T emperature ( °C)
C
50
50
Case T emperature ( °C)
D
Current Derating**
Power Derating
is based on T
75
75
Vishay Siliconix
Si8435DB
100
100
J(max)
www.vishay.com
125
125
= 150 °C,
150
150
5