SI8435DB Vishay, SI8435DB Datasheet - Page 4

• Manufacturer Part Number: SI8435DB
• Description: P-channel 1.5-v G-s Mosfet
• Manufacturer: Vishay

Si8435DB
Vishay Siliconix
TYPICAL CHARACTERISTICS T
www.vishay.com
4
0.12
0.10
0.08
0.06
0.04
0.02
2500
2000
1500
1000
500
5
4
3
2
1
0
0
0
0
0
I D = 1 A
V
C
GS
rss
= 1.5 V
5
3
4
V
Q
r
DS
DS(on)
g
V
– T otal Gate Charge (nC)
I
GS
– Drain-Source Voltage (V)
D
Gate Charge
Capacitance
= 1.8 V
– Drain Current (A)
10
V
vs. Drain Current
6
8
DS
V
GS
C
= 10 V
C
= 2.5 V
oss
iss
V
GS
= 4.5 V
15
12
9
V
DS
= 16 V
A
= 25 °C, unless otherwise noted
20
12
16
New Product
25
20
15
10.00
1.00
0.10
0.01
0.12
0.10
0.08
0.06
0.04
0.02
1.6
1.4
1.2
1.0
0.8
0.6
- 50
0.2
0
T = 150 °C
I D = 1 A
A
On-Resistance vs. Junction Temperature
- 25
Forward Diode Voltage vs Temp
V
1
SD
r
0.4
DS(on)
T
0
V
J
– Source-to-Drain V oltage (V)
GS
– Junction T emperature (°C)
– Gate-to-Source V oltage (V)
vs VGS vs Temperature
25
T = 25 °C
2
A
0.6
V
50
GS
S-72198-Rev. C, 22-Oct-07
Document Number: 73559
= 4.5 V, 2.5 V
3
75
V
GS
T = 125 °C
T = 25 °C
A
A
= 1.8 V, 1.5 V
0.8
100
4
I D = 1 A
125
1.0
150
5