BTB12-600BW3 ON Semiconductor, BTB12-600BW3 Datasheet - Page 3
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BTB12-600BW3
Manufacturer Part Number
BTB12-600BW3
Description
Triacs Silicon Bidirectional Thyristors
Manufacturer
ON Semiconductor
Datasheet
1.BTB12-600BW3.pdf
(6 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BTB12-600BW3G
Manufacturer:
ON Semiconductor
Quantity:
40
Symbol
V
I
V
I
V
I
DRM
RRM
H
DRM
RRM
TM
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
All polarities are referenced to MT1.
With in-phase signals (using standard AC lines) quadrants I and III are used.
Quadrant II
Quadrant III
I
GT
-
Voltage Current Characteristic of Triacs
BTB12-600BW3G, BTB12-800BW3G
(-) I
(-) I
GATE
GATE
GT
GT
(+) MT2
(-) MT2
Quadrant Definitions for a Triac
(Bidirectional Device)
REF
REF
MT1
MT1
(Negative Half Cycle)
(Positive Half Cycle)
http://onsemi.com
MT2 POSITIVE
MT2 NEGATIVE
+
-
3
I
RRM
Quadrant 3
MainTerminal 2 -
(+) I
(+) I
at V
GATE
GATE
GT
GT
RRM
(+) MT2
(-) MT2
REF
REF
MT1
MT1
on state
V
TM
I
H
+ Current
Quadrant IV
Quadrant I
off state
+ I
I
H
V
GT
TM
I
DRM
Quadrant 1
MainTerminal 2 +
at V
DRM
+ Voltage