BTB12-600BW3 ON Semiconductor, BTB12-600BW3 Datasheet - Page 2

• Manufacturer Part Number: BTB12-600BW3
• Description: Triacs Silicon Bidirectional Thyristors
• Manufacturer: ON Semiconductor

2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Thermal Resistance,
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds
Peak Repetitive Blocking Current
Peak On‐State Voltage (Note 2)
Gate Trigger Current (Continuous dc) (V
Holding Current
Latching Current (V
Gate Trigger Voltage (V
Gate Non-Trigger Voltage (T
Rate of Change of Commutating Current, See Figure 10.
Critical Rate of Rise of On-State Current
Critical Rate of Rise of Off‐State Voltage
(V
(I
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
(V
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
(Gate Open, T
(T
(V
TM
J
D
D
D
= 125°C, f = 120 Hz, I
= Rated V
= 12 V, Gate Open, Initiating Current = ±100 mA)
= 0.66 x V
= ± 17 A Peak)
DRM
J
DRM
= 125°C, No Snubber)
D
, V
, Exponential Waveform, Gate Open, T
= 24 V, I
RRM
D
Junction-to-Case
Junction-to-Ambient
= 12 V, R
G
; Gate Open)
J
= 2 x I
G
= 125°C)
= 60 mA)
Characteristic
Characteristic
L
GT
= 30 W)
, tr ≤ 100 ns)
BTB12-600BW3G, BTB12-800BW3G
D
(T
= 12 V, R
J
= 25°C unless otherwise noted; Electricals apply in both directions)
L
= 30 W)
http://onsemi.com
J
= 125°C)
2
T
T
J
J
= 25°C
= 125°C
Symbol
Symbol
(dI/dt)
I
R
R
dV/dt
I
dI/dt
DRM
V
V
V
RRM
I
T
qJC
qJA
GT
I
I
TM
GT
GD
H
L
L
/
c
2000
Min
2.5
2.5
2.5
0.5
0.5
0.5
0.2
0.2
0.2
4.0
-
-
-
-
-
-
-
-
Value
Typ
260
2.3
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.005
Max
1.55
1.0
1.7
1.1
1.1
50
50
50
50
70
90
70
50
-
-
-
-
-
°C/W
A/ms
A/ms
V/ms
Unit
Unit
mA
mA
mA
mA
°C
V
V
V