STI120NH03L STMicroelectronics, STI120NH03L Datasheet

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STI120NH03L

Manufacturer Part Number
STI120NH03L
Description
N-channel 30v - 0.005ohm - 60a - To-220 / D2pak / I2pak Stripfet Power Mosfet For Dc-dc Conversion
Manufacturer
STMicroelectronics
Datasheet

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Quantity
Price
Part Number:
STI120NH03L
Manufacturer:
ST
0
Order codes
General features
1. Value limited by wire bonding
I
I
I
I
Description
These devices utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology.
It is ideal in high performance DC-DC converter
applications where efficiency is to be achieved at
very high output currents.
Applications
I
February 2007
STB120NH03L
STP120NH03L
STI120NH03L
R
Conduction losses reduced
Switching losses reduced
Low Threshold device
Switching application
DS(on)
Type
STB120NH03L
STP120NH03L
STI120NH03L
Part number
*Qg industry’s benchmark Low
N-channel 30V - 0.005Ω - 60A - TO-220 / D
V
30V
30V
30V
DSS
STripFET™ Power MOSFET for DC-DC conversion
<0.0055Ω
<0.0055Ω
<0.0055Ω
R
DS(on)
B120NH03L
P120NH03L
120NH03L
Marking
STB120NH03L - STI120NH03L
60
60
60
I
D
(1)
(1)
(1)
Rev 7
Internal schematic diagram
TO-220
Package
TO-220
D
I²PAK
2
PAK
1
2
3
STP120NH03L
I
2
PAK
2
1 2
PAK / I
Tape & reel
3
Packaging
Tube
Tube
D
2
PAK
www.st.com
2
1
PAK
3
1/17
17

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STI120NH03L Summary of contents

Page 1

... ST’s proprietary STripFET™ technology ideal in high performance DC-DC converter applications where efficiency achieved at very high output currents. Applications Switching application I Order codes Part number STB120NH03L STI120NH03L STP120NH03L February 2007 STB120NH03L - STI120NH03L I DS(on) D (1) 60 (1) 60 (1) 60 TO-220 Internal schematic diagram Marking ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Appendix Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 STB120NH03L - STI120NH03L - STP120NH03L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STB120NH03L - STI120NH03L - STP120NH03L 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous (1) I Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT Derating factor (3) EAS Single pulse avalanche energy ...

Page 4

... Output charge Q oss Third-quadrant gate (2) Q gls charge ∆ 1. Qoss = Coss Coss = Cgd + Cds. See power losses calculation IN 2. Gate charge for synchronous operation. 4/17 STB120NH03L - STI120NH03L - STP120NH03L Test conditions I = 250µ Max rating Max rating =125°C ...

Page 5

... STB120NH03L - STI120NH03L - STP120NH03L Table 5. Source drain diode Symbol Parameter Source-drain current I SD Source-drain current I SDM (pulsed) (1) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Electrical characteristics Test conditions Min ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characteristics Figure 5. Normalized B VDSS 6/17 STB120NH03L - STI120NH03L - STP120NH03L Figure 2. Thermal impedance Figure 4. Transfer characteristics vs temperature Figure 6. Static drain-source on resistance ...

Page 7

... STB120NH03L - STI120NH03L - STP120NH03L Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature 7/17 ...

Page 8

... Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive waveform 8/17 STB120NH03L - STI120NH03L - STP120NH03L Figure 13. Gate charge test circuit Figure 15. Unclamped Inductive load test circuit Figure 17. Switching time waveform ...

Page 9

... STB120NH03L - STI120NH03L - STP120NH03L 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 10

... Package mechanical data DIM. MIN. A 4.40 b 0.61 b1 1.15 c 0.49 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 øP 3.75 Q 2.65 10/17 STB120NH03L - STI120NH03L - STP120NH03L TO-220 MECHANICAL DATA mm. TYP MAX. MIN. 4.60 0.173 0.88 0.024 1.70 0.045 0.70 0.019 15.75 0.60 10.40 0.393 2.70 0.094 5.15 0.194 1.32 0.048 6.60 0.244 2.72 0.094 14 0.511 3.93 0.137 16.40 28.90 3.85 0.147 2.95 0.104 inch TYP. MAX. ...

Page 11

... STB120NH03L - STI120NH03L - STP120NH03L DIM. MIN. A 4.4 A1 2.49 A2 0.03 B 0.7 B2 1.14 C 0.45 C2 1. 1.27 L3 1 0º PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. TYP MAX. MIN. 4.6 0.173 2.69 0.098 0.23 0.001 0.93 0.027 1.7 0.044 0.6 0.017 1.36 0.048 9.35 0.352 8 10.4 0.393 8.5 5.28 0.192 15.85 0.590 1.4 0.050 1.75 0.055 3.2 0.094 0.4 4º ...

Page 12

... Package mechanical data DIM 12/17 STB120NH03L - STI120NH03L - STP120NH03L 2 TO-262 (I PAK) MECHANICAL DATA mm. MIN. TYP MAX. 4.40 4.60 2.40 2.72 0.61 0.88 1.14 1.70 0.49 0.70 1.23 1.32 8.95 9.35 2.40 2.70 4.95 5.15 10 10. 3.50 3.93 1.27 1.40 inch MIN. TYP. MAX. 0.173 0.181 0.094 0.107 0.024 0.034 0.044 0.066 0.019 0.027 0.048 0.052 0.352 0.368 0.094 0.106 ...

Page 13

... STB120NH03L - STI120NH03L - STP120NH03L 5 Packing mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 ...

Page 14

... The high side (SW1) device requires: G – Small Rg and Ls to allow higher gate current peak and to limit the voltage feedback on the gate – Small Qg to have a faster commutation and to reduce gate charge losses – Low R DS(on) 14/17 STB120NH03L - STI120NH03L - STP120NH03L to reduce conduction losses DS(on) to reduce the conduction losses. ...

Page 15

... STB120NH03L - STI120NH03L - STP120NH03L Table 6. Power losses calculation Pconduction Pswitching (1) Recovery Pdiode Conduction Pgate Qoss 1. Dissipated by SW1 during turn-on Table 7. Parameters meaning Parameter d Q gsth Q gls Pconduction Pswitching Pdiode Pgate P Qoss High side switching (SW1) 2 δ DS(on)SW1 ...

Page 16

... Revision history 7 Revision history Table 8. Revision history Date 20-Dec-2004 20-Dec-2005 19-Jun-2006 16-Feb-2007 16/17 STB120NH03L - STI120NH03L - STP120NH03L Revision 4 First release 5 New device inserted 6 The document has been reformatted 7 Added I²PAK package Changes ...

Page 17

... STB120NH03L - STI120NH03L - STP120NH03L Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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