BYW100 STMicroelectronics, BYW100 Datasheet - Page 3

• Manufacturer Part Number: BYW100
• Description: High Efficiency Fast Recovery Rectifier Diode
• Manufacturer: STMicroelectronics

Fig. 1: Average forward power dissipation versus
average forward current.
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Fig. 3: Thermal resistance versus lead length.
Fig. 5: Forward voltage drop versus forward
current (maximum values).
110
100
50.00
10.00
90
80
70
60
50
40
30
20
10
1.00
0.10
0.0
0
5
PF(av)(W)
Rth(°C/W)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
IFM(A)
0.2
0.4
10
(Typical values)
Tj=100°C
0.6
Lleads(mm)
Rth(j-a)
Rth(j-l)
0.8
IF(av) (A)
15
Tj=100°C
VFM(V)
1.0
Tj=25°C
1.2
20
1.4
=tp/T
1.6
T
tp
1.8
25
Fig. 2: Average forward current versus ambient
temperature ( =0.5).
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Fig. 4: Variation of thermal impedance junction to
ambient versus pulse duration (recommended pad
layout, epoxy FR4, e(Cu) = 35µm).
1.00
0.10
0.01
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
20
10
5
2
1
1
1E-2
0
C(pF)
IF(av)(A)
Zth(j-a)/Rth(j-a)
= 0.2
= 0.1
= 0.5
Single pulse
25
Rth(j-a)=100°C/W
1E-1
Rth(j-a)=Rth(j-l)
50
1E+0
Tamb(°C)
10
VR(V)
tp(s)
75
1E+1
100
BYW100-200
125
1E+2
100
F=1MHz
Tj=25°C
5E+2
150
200
3/5