GI9T18 E-Tech Electronics LTD, GI9T18 Datasheet
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Manufacturer Part Number
GI9T18
Description
N-channel Enhancement Mode Power Mosfet
Manufacturer
E-Tech Electronics LTD
G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The G
on-resistance and cost-effectiveness.
Features
*Capable of 2.5V gate drive
*Low Gate Charge
Package Dimensions
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
G
G
I
9T18
I
I
9
I
9
9T18 provide the designer with the best combination of fast switching, ruggedized device design, low
T
T
1
1
8
8
Parameter
Parameter
1
GS
GS
@4.5V
@4.5V
TO-251
Max.
Max.
I
P
I
D
D
D
@T
@T
Symbol
@T
Symbol
Tj, Tstg
Rthj-a
Rthj-c
V
V
I
C
DM
C
GS
C
DS
=100 :
=25 :
=25 :
REF.
C
D
A
B
E
F
-55 ~ +150
Min.
6.40
5.20
6.80
7.20
0.60
Ratings
Value
2.30 REF.
Millimeter
31.3
0.25
±12
140
110
20
38
24
4
Max.
6.80
5.50
7.20
7.80
0.90
Pb Free Plating Product
BV
R
I
D
REF.
DS(ON)
G
H
M
K
ISSUED DATE :2005/04/06
REVISED DATE :
J
L
DSS
0.50
2.20
0.45
0.45
0.90
5.40
Min.
W/ :
Millimeter
Unit
Unit
: /W
: /W
W
Page: 1/4
V
V
A
A
A
:
14m
Max.
0.70
2.40
0.55
0.60
1.50
5.80
20V
38A
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GI9T18 Summary of contents
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description I The G 9T18 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Features ...
Electrical Characteristics ( unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj= Drain-Source Leakage Current(Tj= 150 : Static Drain-Source ...
Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode I G 9T18 ISSUED DATE :2005/04/06 REVISED DATE : Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction ...
Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the ...
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