BU508AX NXP Semiconductors, BU508AX Datasheet - Page 3
BU508AX
Manufacturer Part Number
BU508AX
Description
Silicon Diffused Power Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.BU508AX.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Philips Semiconductors
July 1998
Silicon Diffused Power Transistor
250
200
100
IC / mA
30-60 Hz
0
VCE
Fig.2. Oscilloscope display for V
IC
IB
Fig.3. Switching times waveforms.
Fig.1. Test circuit for V
6V
DIODE
20us
TRANSISTOR
100R
VCE / V
64us
26us
CEOsust
Oscilloscope
1R
VCEOsust
100-200R
Horizontal
Vertical
min
IBend
CEOsust
.
ICsat
.
+ 50v
t
t
t
3
IBend
-VBB
100
10
Fig.6. Typical DC current gain. h
1
0.1
h
FE
IC
IB
Fig.4. Switching times definitions.
Fig.5. Switching times test circuit .
LB
parameter V
IBend
ts
IC/A
D.U.T.
1
CE
Product specification
+ 150 v nominal
adjust for ICsat
tf
1mH
12nF
10 %
90 %
ICsat
FE
- IBM
BU508AX
BU508AD
= f (I
t
t
BY228
Rev 1.200
C
10
)