PMD9003D NXP Semiconductors, PMD9003D Datasheet - Page 9
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
PMD9003D
Manufacturer Part Number
PMD9003D
Description
Low Vcesat Biss Transistors
Manufacturer
NXP Semiconductors
Datasheet
1.PMD9003D.pdf
(15 pages)
NXP Semiconductors
PMD9003D_1
Product data sheet
Fig 9. TR2 and D1: DC current gain as a function of
Fig 11. TR2: Base-emitter voltage as a function of
(1) T
(2) T
(3) T
(4) T
(5) T
(1) T
(2) T
(3) T
h
V
(V)
FE
BE
500
400
300
200
100
1.2
1.0
0.8
0.6
0.4
0.2
0
10
10
V
collector current; typical values
V
collector current; typical values
amb
amb
amb
amb
amb
amb
amb
amb
CE
CE
1
2
= 5 V
= 5 V
= 55 C
= 25 C
= 100 C
= 125 C
= 150 C
= 55 C
= 25 C
= 100 C
(2)
(1)
10
1
1
(3)
(4)
1
10
(5)
10
(1)
(2)
(3)
10
2
10
I
006aaa929
006aaa931
C
2
I
C
(mA)
(mA)
Rev. 01 — 24 November 2006
10
10
3
3
Fig 10. TR2: Collector current as a function of
Fig 12. TR2: Base-emitter saturation voltage as a
V
(1) T
(2) T
(3) T
(A)
BEsat
I
(V)
0.20
C
0.16
0.12
0.08
0.04
1.2
1.0
0.8
0.6
0.4
0.2
0
10
T
collector-emitter voltage; typical values
I
function of collector current; typical values
C
0
amb
amb
amb
amb
/I
2
B
= 20
= 25 C
= 55 C
= 25 C
= 100 C
10
1
1
2
1
10
I
3
B
(1)
(2)
(3)
PMD9003D
(mA) = 5
© NXP B.V. 2006. All rights reserved.
10
0.5
1.5
1
4.5
4
3.5
3
2.5
2
4
006aaa930
006aaa932
2
MOSFET driver
V
I
C
CE
(mA)
(V)
10
5
3
9 of 15