PMD9002D NXP Semiconductors, PMD9002D Datasheet - Page 3

• Manufacturer Part Number: PMD9002D
• Description: Low Vcesat Biss Transistors
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMD9002D_1
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
I
I
I
P
Diode (D1)
I
I
I
Device
T
T
T
C
CM
BM
F
FRM
FSM
j
amb
stg
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on a ceramic PCB, Al
Limiting values
Parameter
collector current
peak collector current
peak base current
total power dissipation
forward current
repetitive peak forward current
non-repetitive peak forward
current
junction temperature
ambient temperature
storage temperature
Rev. 01 — 20 November 2006
…continued
2
O
3
, standard footprint.
Conditions
single pulse;
t
single pulse;
t
T
t
square wave
t
t
t
p
p
p
p
p
p
amb
= 1 s
= 100 s
= 10 ms
1 ms
1 ms
1 ms;
25 C
0.25
[1]
[2]
[3]
PMD9002D
Min
-
-
-
-
-
-
-
-
-
-
-
-
65
65
© NXP B.V. 2006. All rights reserved.
MOSFET driver
Max
0.1
0.2
0.2
290
325
400
150
+150
+150
0.2
0.6
9
3
1.7
2
Unit
A
A
A
mW
mW
mW
A
A
A
A
A
.
C
C
C
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