CMF02 TOSHIBA Semiconductor CORPORATION, CMF02 Datasheet - Page 3

• Manufacturer Part Number: CMF02
• Description: Toshiba Fast Recovery Diode Silicon Diffused Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.01
160
140
120
100
0.1
80
60
40
20
10
12
10
1
0
8
6
4
2
0
0
0
1
Pulse test
(board size: 50 mm × 50 mm, land size: 6 mm × 6 mm)
T j
Instantaneous forward voltage V F
75°C
Average forward current I
0.2
Device mounted on a glass-epoxy board
150°C
1.0
D
3
60°
Surge forward current
0.4
Ta max – I
Number of cycles
5
(non-repetitive)
25°C
2.0
120°
i
F
180°
0.6
– v
10
F
F (AV)
3.0
0.8
F (AV)
30
Rectangular
Conduction
angle: .
Ta
f
4.0
waveform
0°
1.0
(A)
50 Hz
50
.
(V)
25°C
360°
100
1.2
5.0
3
1000
160
140
120
100
100
3.0
2.0
1.0
80
60
40
20
10
0.001
0
1
0
0
0
Device mounted on
a glass-epoxy board
(board size: 50 mm × 50 mm,
land size: 2.1 mm × 1.4 mm,
board thickness: 1.6 t)
Rectangular
Conduction
angle: .
waveform
0°
.
Device mounted on a ceramic board
(board size: 50 mm × 50 mm,
land size: 2 mm × 2 mm,
board thickness: 0.64 t)
0.01
Average forward current I
Average forward current I
0.2
360°
0.2
0.4
0.1
0.4
P
T
F (AV)
 max – I
Time t (s)
r
D
th (j-a)
0.6
60°
0.6
1
– I
Device mounted on
a glass-epoxy board
(board size: 50 mm × 50 mm,
land size: 6 mm × 6 mm,
board thickness: 1.6 t)
D
F (AV)
– t
F (AV)
60°
0.8
0.8
10
120°
F (AV)
F (AV)
Conduction angle D
120°
0°
Rectangular
waveform
D
100
1.0
180°
1.0
(A)
(A)
360°
180°
2007-04-16
1000
1.2
1.2
CMF02