SBT350-10R Sanyo Semiconductor Corporation, SBT350-10R Datasheet - Page 2

• Manufacturer Part Number: SBT350-10R
• Description: Schottky Barrier Diode Twin Type ? Cathode Common
• Manufacturer: Sanyo Semiconductor Corporation

Package Dimensions
unit : mm
1180B
0.01
100
1.0
0.1
10
50
45
40
35
30
25
15
10
20
3.4
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
5
0
5.45
0
0
(1)Rectangular wav e =60
(2)Rectangular wav e =120
(3)Rectangular wav e =180
(4)Sine wav e =180
Represented by max
Rectangular
wave
1
16.0
360
2
5
3
Average Forward Current, I O -- A
1.0
0.5
2.8
2.0
10
5.45
Forward Voltage, V F -- V
P F (AV) -- I O
15
I F -- V F
(1)
5.6
0.6
1.0
20
2.0
3.1
1 : Anode
2 : Cathode
3 : Anode
SANYO : TO-3PML
25
(2)
Sine wave
1.5
30
180
360
(4)
35
IT09148
IT09156
(3)
SBT350-10R
2.0
40
100
10
35
30
25
20
15
10
7
5
3
2
7
5
3
2
7
5
3
2
5
0
Electrical Connection
0
0
(1)Rectangular wav e =300
(2)Rectangular wav e =240
(3)Rectangular wav e =180
(4)Sine wav e =180
Rectangular
wave
Sine wave
180
360
20
20
360
Peak Reverse Voltage, V RM -- V
V R
Reverse Voltage, V R -- V
Anode
P R (AV) -- V RM
40
40
V R
Cathode
I R -- V R
60
60
Anode
80
80
100
100
No.7805-2/3
(1)
(2)
(3)
(4)
IT09155
IT09157
120
120