MT8HTF12864HZ Micron Semiconductor Products, MT8HTF12864HZ Datasheet

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MT8HTF12864HZ

Manufacturer Part Number
MT8HTF12864HZ
Description
1gb, 2gb X64, Sr 200-pin Ddr2 Sdram Sodimm
Manufacturer
Micron Semiconductor Products
Datasheet
DDR2 SDRAM SODIMM
MT8HTF12864HZ – 1GB
MT8HTF25664HZ – 2GB
Features
• 200-pin, small-outline dual in-line memory module
• Fast data transfer rates: PC2-3200, PC2-4200,
• 1GB (128 Meg x 64), 2GB (256 Meg x 64)
• V
• V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent opera-
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Serial presence detect (SPD) with EEPROM
• Gold edge contacts
• Single rank
• Halogen-free
Table 1: Key Timing Parameters
PDF: 09005aef83c2a451
htf8c128_256x64hz.pdf - Rev. C 3/10 EN
(SODIMM)
PC2-5300, PC2-6400, or PC2-8500
tion
Speed
Grade
-1GA
-80E
-800
-667
-53E
-40E
DD
DDSPD
= V
DDQ
= 1.7–3.6V
Nomenclature
1.8V
Products and specifications discussed herein are subject to change by Micron without notice.
Industry
PC2-8500
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
CL = 7
1066
t
CK
CL = 6
800
800
800
1GB, 2GB (x64, SR) 200-Pin DDR2 SDRAM SODIMM
Data Rate (MT/s)
CL = 5
667
800
667
667
1
Figure 1: 200-Pin SODIMM (MO-224 R/C B)
Module height: 30mm (1.18in)
Options
• Operating temperature
• Package
• Frequency/CL
Notes:
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 200-pin DIMM (halogen-free)
– 1.875ns @ CL = 7 (DDR2-1066)
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
CL = 4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
533
533
533
553
553
400
1. Contact Micron for industrial temperature
2. CL = CAS (READ) latency.
module offerings.
CL = 3
400
400
400
400
400
400
2
A
13.125
A
t
(ns)
12.5
RCD
≤ +85°C)
≤ +70°C)
15
15
15
15
© 2009 Micron Technology, Inc. All rights reserved.
1
1
13.125
(ns)
12.5
t
15
15
15
15
RP
Features
Marking
None
-1GA
-80E
-800
-667
58.125
(ns)
57.5
t
Z
I
60
60
55
55
RC

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MT8HTF12864HZ Summary of contents

Page 1

... DDR2 SDRAM SODIMM MT8HTF12864HZ – 1GB MT8HTF25664HZ – 2GB Features • 200-pin, small-outline dual in-line memory module (SODIMM) • Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, PC2-6400, or PC2-8500 • 1GB (128 Meg x 64), 2GB (256 Meg x 64) • 1.8V DD DDQ • 1.7– ...

Page 2

... The data sheet for the base device can be found on Micron’s Web site. Notes: 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT8HTF12864HZ-667G1. PDF: 09005aef83c2a451 htf8c128_256x64hz.pdf - Rev. C 3/10 EN ...

Page 3

Pin Assignments Table 5: Pin Assignments 200-Pin DDR2 SODIMM Front Pin Symbol Pin Symbol Pin DQS2 101 REF 103 DQ0 55 DQ18 105 7 DQ1 57 DQ19 107 9 V ...

Page 4

Pin Descriptions The pin description table below is a comprehensive list of all possible pins for all DDR2 modules. All pins listed may not be supported on this module. See Pin Assignments for information specific to this module. Table 6: ...

Page 5

Table 6: Pin Descriptions (Continued) Symbol Type SDA I/O RDQSx, Output RDQS#x Err_Out# Output (open drain Supply DD DDQ V Supply DDSPD V Supply REF V Supply SS – NC – NF – NU – RFU PDF: 09005aef83c2a451 ...

Page 6

Functional Block Diagram Figure 2: Functional Block Diagram S0# DQS0# DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1# DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2# DQS2 DM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 ...

Page 7

General Description DDR2 SDRAM modules are high-speed, CMOS dynamic random access memory mod- ules that use internally configured 4 or 8-bank DDR2 SDRAM devices. DDR2 SDRAM modules use DDR architecture to achieve high-speed operation. DDR2 architecture is essentially a 4n-prefetch ...

Page 8

Electrical Specifications Stresses greater than those listed may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other condi- tions outside those indicated in the device data ...

Page 9

DRAM Operating Conditions Recommended AC operating conditions are given in the DDR2 component data sheets. Component specifications are available on Micron's Web site. Module speed grades cor- relate with component speed grades. Table 8: Module and Component Speed Grades DDR2 ...

Page 10

I Specifications DD Table 9: DDR2 I Specifications and Conditions – 1GB DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com- ponent data sheet Parameter Operating one ...

Page 11

Table 9: DDR2 I Specifications and Conditions – 1GB (Continued) DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com- ponent data sheet Parameter Operating bank interleave read ...

Page 12

Table 10: DDR2 I Specifications and Conditions – 2GB DD Values shown for MT47H256M8 DDR2 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com- ponent data sheet Parameter Operating one bank active-precharge current: ...

Page 13

Serial Presence-Detect For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD. Table 11: SPD EEPROM Operating Conditions Parameter/Condition Supply voltage Input high voltage: logic 1; All inputs Input low voltage: logic 0; All inputs Output low voltage: I ...

Page 14

Module Dimensions Figure 3: 200-Pin DDR2 SODIMM 2.0 (0.079) R (2X) 1.8 (0.071) D (2X) 6.0 (0.236) TYP 2.0 (0.079) TYP PIN 200 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted. Notes: 2. The dimensional ...

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