MT18GTF25672FDY Micron Semiconductor Products, MT18GTF25672FDY Datasheet - Page 6

• Manufacturer Part Number: MT18GTF25672FDY
• Description: 1.5v Ddr2 Sdram Fbdimm
• Manufacturer: Micron Semiconductor Products

Electrical Specifications
Table 6: Absolute Maximum Ratings
Table 7: Input DC Voltage and Operating Conditions
PDF: 09005aef82b6453f
gtf18c256x72fdy.pdf - Rev. D 12/09 EN
Parameter
Voltage on any signal pin relative to V
Voltage on V
Voltage on V
Voltage on V
DDR2 SDRAM device operating case temperature
AMB device operating case temperature
Parameter
AMB supply voltage
DDR2 SDRAM supply voltage
Termination voltage
EEPROM supply voltage
SPD input high (logic 1) voltage
SPD input low (logic 0) voltage
RESET input high (logic 1) voltage
RESET input low (logic 0) voltage
Leakage current (RESET)
Leakage current (link)
CC
DD
TT
pin relative to V
pin relative to V
pin relative to V
Notes:
Notes:
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in each device’s data sheet is not implied. Exposure to
absolute maximum rating conditions for extended periods may adversely affect reliability.
1. V
2. T
3. See the applicable DDR2 SDRAM component data sheet for
1. During the initial power ramp, V
2. Applies to AMB and SPD.
3. Applies to SMBus and SPD bus signals.
4. Applies to AMB CMOS signal RESET#.
5. For all other AMB-related DC parameters, refer to the high-speed differential link inter-
SS
SS
SS
t
register settings. The
essary to sustain <85°C operation.
to 100ms prior to the start of the DRAM initialization process. The 100ms of excess V
voltage time must be less than 0.01% of the total DRAM powered-up time.
face specification.
REFI = 3.9µs above 85°C); refer to the DDR2 SDRAM component data sheet.
C
IN
is specified at 95°C only when using 2X refresh timing (
should not be greater than V
SS
Symbol
V
V
V
V
V
V
DDSPD
V
IH(DC)
IH(DC)
V
IL(DC)
IL(DC)
t
REFI parameter is used to specify the doubled refresh interval nec-
I
I
DD
CC
TT
2GB (x72, DR) 240-Pin DDR2 SDRAM FBDIMM
L
L
V
Symbol
6
IN
V
V
V
, V
T
DD
CC
TT
C
OUT
0.48 × V
CC
DD
1.455
1.425
Min
–0.6
.
–90
3.0
2.1
1.0
–5
may exceed V
–
Micron Technology, Inc. reserves the right to change products or specifications without notice.
DD
Min
–0.3
–0.3
–0.5
–0.5
0
0
0.5 × V
Nom
1.5
1.5
–
–
–
–
–
–
–
DD
DD
(MAX) and be as high as 1.8V for up
Electrical Specifications
Max
1.75
1.75
110
1.8
1.8
95
0.52 × V
t
REFI = 7.8µs at or below 85°C;
V
1.575
1.625
t
Max
+0.8
DDSPD
+90
REFI and extended mode
© 2007 Micron Technology, Inc. All rights reserved.
3.6
0.5
+5
–
DD
Units
°C
°C
V
V
V
V
Units
µA
µA
V
V
V
V
V
V
V
V
Notes
2, 3
Notes
1
1
2
3
3
4
3
4
5
DD