BGA2012 NXP Semiconductors, BGA2012 Datasheet - Page 2

• Manufacturer Part Number: BGA2012
• Description: 1900 Mhz High Linear Low Noise Amplifier
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon Monolitic Microwave Integrated Circuit (MMIC)
amplifier consisting of an NPN double polysilicon transistor
with integrated biasing for low voltage applications in a
6-pin SOT363 plastic SMD package.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
2000 Dec 04
V
I
I
|s
NF
V
V
I
I
P
T
T
S
C
S
C
SYMBOL
SYMBOL
stg
j
Low current, low voltage
High linearity
High power gain
Low noise
Integrated temperature compensated biasing
Control pin for adjustment bias current.
RF front end
Low noise amplifiers, e.g. CDMA, PHs, Dect, etc.
S
S
C
tot
1900 MHz high linear low noise amplifier
21
|
2
DC supply voltage
DC supply current
DC control current
insertion power gain
noise figure
DC supply voltage
voltage on control pin
supply current
control current
total power dissipation
storage temperature
operating junction temperature
PARAMETER
PARAMETER
RF input AC coupled
V
in application circuit, see Fig.2;
f = 1900 MHz
I
RF input AC coupled
forced by DC voltage on RF input
T
S
s
C
= 7 mA; f = 1900 MHz
= V
100 C
S
2
PINNING
handbook, halfpage
CONDITIONS
CONDITIONS
Marking code: A6-
PIN
5, 6
Fig.1 Simplified outline (SOT363) and symbol.
1
2
3
4
Top view
6
1
5
2
RF in
V
V
RF out
GND
C
S
4
3
MBL251
V C
DESCRIPTION
3
7.5
0.11
16
1.7
65
TYP.
MIN.
CIRCUIT
RF in
BIAS
Product specification
V S
4.5
4.5
V
15
0.25
70
+150
150
MAX.
MAX.
BGA2012
S
GND
RF out
V
mA
mA
dB
dB
V
V
mA
mA
mW
C
C
UNIT
UNIT