PDTA123E NXP Semiconductors, PDTA123E Datasheet - Page 2

• Manufacturer Part Number: PDTA123E
• Description: Pnp Resistor-equipped Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
2004 Aug 02
PDTA123EE
PDTA123EEF
PDTA123EK
PDTA123EM
PDTA123ES
PDTA123ET
PDTA123EU
Built-in bias resistors
Simplified circuit design
Reduction of component count
Reduced pick and place costs.
General purpose switching and amplification
Inverter and interface circuits
Circuit driver.
PNP resistor-equipped transistors;
R1 = 2.2 k , R2 = 2.2 k
TYPE NUMBER
* = t: Made in Malaysia.
* = W: Made in China.
SOT54 (TO-92)
PHILIPS
SOT416
SOT490
SOT346
SOT883
SOT323
SOT23
PACKAGE
SC-101
SC-75
SC-89
SC-59
SC-43
SC-70
EIAJ
2
QUICK REFERENCE DATA
DESCRIPTION
PNP resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
V
I
R1
R2
SYMBOL
O
CEO
MARKING CODE
collector-emitter
voltage
output current (DC)
bias resistor
bias resistor
PARAMETER
TA123E
*21
*42
5C
6C
F7
42
(1)
(1)
PDTA123E series
PDTC123EE
PDTC123EEF
PDTC123EK
PDTC123EM
PDTC123ES
PDTC123ET
PDTC123EU
Product specification
NPN COMPLEMENT
2.2
2.2
TYP.
MAX.
50
100
V
mA
k
k
UNIT