PDTA115E NXP Semiconductors, PDTA115E Datasheet - Page 2

• Manufacturer Part Number: PDTA115E
• Description: Pnp Resistor-equipped Transistors; R1 = 100 Kw, R2 = 100 Kw
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
2004 Jul 30
PDTA115EE
PDTA115EEF
PDTA115EK
PDTA115EM
PDTA115ES
PDTA115ET
PDTA115EU
Built-in bias resistors
Simplified circuit design
Reduction of component count
Reduced pick and place costs.
General purpose switching and amplification
Inverter and interface circuits
Circuit driver.
PNP resistor-equipped transistors;
R1 = 100 k , R2 = 100 k
TYPE NUMBER
* = t: Made in Malaysia.
* = W: Made in China.
SOT54 (TO-92)
PHILIPS
SOT416
SOT490
SOT346
SOT883
SOT323
SOT23
PACKAGE
SC-101
SC-75
SC-89
SC-59
SC-43
SC-70
EIAJ
2
QUICK REFERENCE DATA
DESCRIPTION
PNP resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
V
I
R1
R2
SYMBOL
O
CEO
MARKING CODE
collector-emitter
voltage
output current (DC)
bias resistor
bias resistor
PARAMETER
TA115E
*AB
*7C
5E
6B
F6
62
(1)
(1)
PDTA115E series
PDTC115EE
PDTC115EEF
PDTC115EK
PDTC115EM
PDTC115ES
PDTC115ET
PDTC115EU
Product specification
NPN COMPLEMENT
100
100
TYP.
MAX.
50
20
V
mA
k
k
UNIT