CEM7101 Chino-Excel Technology Co., Ltd., CEM7101 Datasheet - Page 2

• Manufacturer Part Number: CEM7101
• Description: Dual N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Chino-Excel Technology Co., Ltd.

Electrical Characteristics
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Parameter
c
d
d
b
c
T
A
= 25 C unless otherwise noted
R
Symbol
V
BV
t
t
C
V
C
Q
I
GS(th)
DS(on)
C
d(on)
d(off)
Q
I
g
I
GSSF
Q
GSSR
I
t
DSS
t
SD
oss
iss
FS
rss
gd
S
r
f
gs
g
DSS
5 - 136
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
GS
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
Test Condition
= 0V, I
= 30V, V
= 20V, V
= -20V, V
= V
= 10V, I
= 4.5V, I
= 15V, I
= 15V, V
= 15V, I
= 10V, R
= 15V, I
= 10V
= 0V, I
DS
, I
D
S
D
D
D
D
D
= 250 µ A
= 1.7A
D
GS
GEN
GS
DS
DS
= 3.5A
= 3.5A,
= 250 µ A
= 1.8A
= 1A,
= 1.0A
= 0V,
= 0V
= 0V
= 0V
= 6
Min
30
1
CEM7101
Typ
245
140
6.4
1.0
1.5
60
80
50
35
15
2
6
3
Max
-100
100
100
1.7
1.2
75
10
1
3
Units
m
m
nA
nA
nC
nC
nC
µ A
pF
pF
pF
ns
ns
ns
ns
V
V
S
A
V