HY27UH08AG5M Hynix Semiconductor, HY27UH08AG5M Datasheet - Page 24

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HY27UH08AG5M

Manufacturer Part Number
HY27UH08AG5M
Description
16gb Nand Flash
Manufacturer
Hynix Semiconductor
Datasheet

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Rev. 0.6 / Dec. 2006
IO
DEVICE IDENTIFIER CYCLE
0
1
2
3
4
5
6
7
HY27UH08AGDM
HY27UH08AG5M
Part Number
Write Protect
Ready/Busy
Ready/Busy
Pass / Fail
Program
Page
NA
NA
NA
NA
2nd
3rd
4th
1st
Write Protect
Ready/Busy
Ready/Busy
Pass / Fail
Voltage
Block
Erase
3.3V
3.3V
NA
NA
NA
NA
Internal chip number, cell Type, Number of Simultaneously Programmed pages.
Table 14: Device Identifier Coding
Bus Width
Table 13: Status Register Coding
Table 15: Read ID Data Table
Pass / Fail (N-1)
Cache Register
Pass / Fail (N)
x8
x8
Controller Bit
Write Protect
Program
Cache
P/E/R
Free
NA
NA
NA
(Manufacture Code)
Page Size, Block Size, Spare Size, Organization
1st cycle
Write Protect
ADh
ADh
Ready/Busy
Ready/Busy
Read
NA
NA
NA
NA
NA
Manufacturer Code
Device Identifier
DESCRIPTION
16Gbit (2Gx8bit) NAND Flash
HY27UH08AG(5/D)M Series
Controller Bit
(Device Code)
Ready/Busy
2nd cycle
Cache
Read
P/E/R
D3h
D3h
(Only for Cache Program,
3rd Cycle 4th Cycle
Busy: ‘0’ Ready’: ‘1’
Active: ‘0’ Idle: ‘1’
Not Protected: ‘1’
Pass: ‘0’ Fail: ‘1’
Pass: ‘0’ Fail: ‘1’
else Don’t care)
C1h
C1h
Protected: ‘0’
CODING
-
-
-
95h
95h

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